CY7C1041-15VI CYPRESS [Cypress Semiconductor], CY7C1041-15VI Datasheet - Page 5

• Manufacturer Part Number: CY7C1041-15VI
• Description: 256K x 16 Static RAM
• Manufacturer: CYPRESS [Cypress Semiconductor]

Data Retention Characteristics
Switching Characteristics
V
I
t
t
Notes:
READ CYCLE
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WRITE CYCLE
t
t
t
t
t
t
t
t
t
t
t
10. No input may exceed V
Parameter
CCDR
CDR
R
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
DBE
LZBE
HZBE
WC
SCE
AW
HA
SA
PWE
SD
HD
LZWE
HZWE
BW
9.
DR
[9]
Parameter
[3]
t
r
< 100 s for all speeds.
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
Byte Enable to Data Valid
Byte Enable to Low Z
Byte Disable to High Z
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE HIGH to Low Z
WE LOW to High Z
Byte Enable to End of Write
[7, 8]
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
CC
CC
for Data Retention
+ 0.5V.
Description
[6]
Description
[4]
[6]
[5, 6]
[5, 6]
[5, 6]
Over the Operating Range (continued)
Over the Operating Range
Com’l L
V
CE > V
V
IN
CC
> V
5
= V
CC
CC
Conditions
DR
– 0.3V,
– 0.3V or V
Min.
= 2.0V,
20
20
13
13
13
13
0
3
0
0
0
0
3
3
0
9
7C1041-20
[10]
IN
< 0.3V
Max.
20
20
20
8
8
8
8
8
8
Min.
2.0
0
Min.
25
25
15
15
15
10
15
5
0
5
0
0
0
0
0
5
7C1041-25
See Note 9
Max.
200
Max.
25
25
10
10
10
25
10
10
10
CY7C1041
Unit
Unit
ns
V
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
A
A
A