MT48H16M16LF MICRON [Micron Technology], MT48H16M16LF Datasheet - Page 43

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MT48H16M16LF

Manufacturer Part Number
MT48H16M16LF
Description
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
Manufacturer
MICRON [Micron Technology]
Datasheet

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Table 8:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
MT48H16M16LF_2.fm - Rev F 4/07 EN
(auto precharge
(auto precharge
Row activating,
Current State
precharging
precharge)
precharge)
(with auto
(with auto
active, or
disabled)
disabled)
Write
Write
Read
Read
Any
Idle
Truth Table – Current State Bank n, Command to Bank m
Notes: 1–6; notes appear below and on next page
Notes:
CS#
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
RAS# CAS# WE# Command (Action)
X
H
X
H
H
H
H
H
H
H
H
H
H
1. This table applies when CKE
2. This table describes alternate bank operation, except where noted; i.e., the current state is
3. Current state definitions:
4. AUTO REFRESH, SELF REFRESH and LMR commands may only be issued when all banks are
L
L
L
L
L
L
L
L
L
L
after
for bank n and the commands shown are those allowed to be issued to bank m (assuming
that bank m is in such a state that the given command is allowable). Exceptions are covered
in the notes below.
Idle:
Row active:
Read:
Write:
Read w/auto-
precharge enabled:
Write w/auto-
precharge enabled:
idle.
X
H
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
t
XSR has been met (if the previous state was self refresh).
H
H
H
H
H
H
H
H
H
H
H
X
X
L
L
L
L
L
L
L
L
L
L
COMMAND INHIBIT (NOP/Continue previous operation)
NO OPERATION (NOP/Continue previous operation)
Any command otherwise allowed to bank m
ACTIVE (Select and activate row)
READ (Select column and start READ burst)
WRITE (Select column and start WRITE burst)
PRECHARGE
ACTIVE (Select and activate row)
READ (Select column and start new READ burst)
WRITE (Select column and start WRITE burst)
PRECHARGE
ACTIVE (Select and activate row)
READ (Select column and start READ burst)
WRITE (Select column and start new WRITE burst)
PRECHARGE
ACTIVE (Select and activate row)
READ (Select column and start new READ burst)
WRITE (Select column and start WRITE burst)
PRECHARGE
ACTIVE (Select and activate row)
READ (Select column and start READ burst)
WRITE (Select column and start new WRITE burst)
PRECHARGE
The bank has been precharged, and
A row in the bank has been activated, and
data bursts/accesses and no register accesses are in progress.
A READ burst has been initiated, with auto precharge disabled, and
has not yet terminated or been terminated.
A WRITE burst has been initiated, with auto precharge disabled, and
has not yet terminated or been terminated.
Starts with registration of a READ command with auto precharge
enabled and ends when
will be in the idle state.
Starts with registration of a WRITE command with auto precharge
enabled and ends when
will be in the idle state.
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
n-1
43
was HIGH and CKE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
t
RP has been met. Once
RP has been met. Once
n
is HIGH (see Table 6 on page 40) and
t
RP has been met.
©2006 Micron Technology, Inc. All rights reserved.
t
RCD has been met. No
t
t
RP is met, the bank
RP is met, the bank
Truth Tables
7, 13, 14
7, 13, 15
7, 13, 16
7, 13, 17
Notes
7, 11
7, 12
7, 8
7, 9
10
10
10
10
7
7

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