MT48H16M16LF MICRON [Micron Technology], MT48H16M16LF Datasheet - Page 49

• Manufacturer Part Number: MT48H16M16LF
• Description: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
• Manufacturer: MICRON [Micron Technology]

Table 15:
Figure 33:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
MT48H16M16LF_2.fm - Rev F 4/07 EN
Temperature-Compensated Self Refresh
Parameter/Condition
Self refresh current:
CKE = LOW – 4-bank refresh
Self refresh current:
CKE = LOW – 2-bank refresh
Self refresh current:
CKE = LOW – 1-bank refresh
Self refresh current:
CKE = LOW – Half-bank refresh
Self refresh current:
CKE = LOW – Quarter-bank refresh
150
125
100
75
50
25
0
-40
I
Notes: 2, 28, 30; notes appear on page 51 and page 52
Typical Self Refresh Current vs. Temperature
DD
-30
7 – Self Refresh Current Options
Full Array
1/2 Array
1/4 Array
1/8 Array
1/16 Array
-20
-10
0
Temperature (°C)
10
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
Temperature
Maximum
49
85ºC
70ºC
45ºC
15ºC
85ºC
70ºC
45ºC
15ºC
85ºC
70ºC
45ºC
15ºC
85ºC
70ºC
45ºC
15ºC
85ºC
70ºC
45ºC
15ºC
20
30
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Option “L”
Low I
40
220
175
140
125
200
150
130
115
185
140
120
115
175
125
115
110
170
120
110
105
DD
7
50
Standard I
Electrical Specifications
60
©2006 Micron Technology, Inc. All rights reserved.
300
210
190
180
275
180
160
150
265
160
140
140
255
150
130
125
250
140
120
115
DD
7
70
Units
80
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
90