AP15N03H A-POWER [Advanced Power Electronics Corp.], AP15N03H Datasheet
AP15N03H
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AP15N03H Summary of contents
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... Thermal Data Symbol Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP15N03H/J BV 30V DSS R 80mΩ DS(ON) I 15A TO-252( TO-251(J) S Rating Units 30 ± ...
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... AP15N03H/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 1 1.4 1.2 1.0 0.8 0 -50 Fig 4. Normalized On-Resistance AP15N03H =10V G V =8. =6. =4. Drain-to-Source Voltage (V) DS =10V 0 50 100 Junction Temperature ( C) j v.s. Junction Temperature ...
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... AP15N03H Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 100 = Single Pulse (V) DS Fig 7. Maximum Safe Operating Area 100 125 150 10us 100us 0.1 1ms 10ms DC 0.01 100 0.00001 Fig 8. Effective Transient Thermal Impedance ...
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... Fig 11. Forward Characteristic of Reverse Diode 1000 100 Fig 10. Typical Capacitance Characteristics = -50 1.1 1.3 1.5 AP15N03H ( Junction Temperature( j Fig 12. Gate Threshold Voltage v.s. Junction Temperature f=1.0MHz Ciss Coss Crss 26 31 100 150 o C) ...
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... AP15N03H Fig 13. Switching Time Circuit Fig 15. Gate Charge Circuit V 90 THE DS OSCILLOSCOPE 0.5x RATED THE OSCILLOSCOPE 5V 0.8 x RATED d(on) Fig 14. Switching Time Waveform ...