CY7C1470V25_11 CYPRESS [Cypress Semiconductor], CY7C1470V25_11 Datasheet

no-image

CY7C1470V25_11

Manufacturer Part Number
CY7C1470V25_11
Description
72-Mbit (2 M x 36/4 M x 18/1 M x 72) Pipelined SRAM with NoBL Architecture
Manufacturer
CYPRESS [Cypress Semiconductor]
Datasheet
72-Mbit (2 M × 36/4 M × 18/1 M × 72) Pipelined SRAM with NoBL
Features
Cypress Semiconductor Corporation
Document Number: 38-05290 Rev. *L
Logic Block Diagram - CY7C1470V25 (2 M × 36)
Pin-compatible and functionally equivalent to ZBT™
Supports 250-MHz bus operations with zero wait states
Internally self-timed output buffer control to eliminate the need
to use asynchronous OE
Fully registered (inputs and outputs) for pipelined operation
Byte write capability
Single 2.5 V power supply
2.5 V/1.8 V I/O supply (V
Fast clock-to-output times
Clock enable (CEN) pin to suspend operation
Synchronous self-timed writes
CY7C1470V25, CY7C1472V25 available in JEDEC-standard
Pb-free 100-pin TQFP, Pb-free and
non Pb-free 165-ball FBGA package. CY7C1474V25 available
in Pb-free and non Pb-free 209-ball FBGA package
IEEE 1149.1 JTAG boundary scan compatible
Burst capability—linear or interleaved burst order
“ZZ” sleep mode option and stop clock option
Available speed grades are 250, 200 and 167 MHz
3.0 ns (for 250-MHz device)
TM
Architecture
CEN
CLK
A0, A1, A
ADV/LD
MODE
BW
BW
BW
BW
C
WE
CE1
CE2
CE3
OE
ZZ
a
b
c
d
DDQ
)
WRITE ADDRESS
REGISTER 1
REGISTER 0
ADDRESS
CONTROL
READ LOGIC
SLEEP
AND DATA COHERENCY
Pipelined SRAM with NoBL™ Architecture
WRITE REGISTRY
CONTROL LOGIC
198 Champion Court
WRITE ADDRESS
ADV/LD
REGISTER 2
C
72-Mbit (2 M × 36/4 M × 18/1 M × 72)
A1
A0
D1
D0
BURST
LOGIC
Q1
Q0
A0'
A1'
Functional Description
The CY7C1470V25/CY7C1472V25/CY7C1474V25 are 2.5 V, 2
M × 36/4 M × 18/1 M × 72 synchronous pipelined burst SRAMs
with No Bus Latency™ (NoBL logic, respectively. They are
designed to support unlimited true back-to-back read/write
operations
CY7C1470V25/CY7C1472V25/CY7C1474V25 are equipped
with the advanced (NoBL) logic required to enable consecutive
read/write operations with data being transferred on every clock
cycle. This feature dramatically improves the throughput of data
in systems that require frequent write/read transitions. The
CY7C1470V25/CY7C1472V25/CY7C1474V25 are pin-compatible
and functionally equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. All data outputs pass through output
registers controlled by the rising edge of the clock. The clock
input is qualified by the clock enable (CEN) signal, which when
deasserted suspends operation and extends the previous clock
cycle. Write operations are controlled by the Byte Write Selects
(BW
and BW
input. All writes are conducted with on-chip synchronous
self-timed write circuitry.
Three synchronous chip enables (CE
asynchronous output enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tri-stated during
the data portion of a write sequence.
DRIVERS
WRITE
a
–BW
REGISTER 1
a
MEMORY
ARRAY
–BW
INPUT
h
San Jose
for CY7C1474V25, BW
b
E
for CY7C1472V25) and a write enable (WE)
M
with
E
N
E
A
P
S
S
S
,
E
CA 95134-1709
REGISTER 0
INPUT
no
D
A
A
N
G
T
S
T
E
E
R
I
E
O
U
T
P
U
T
B
U
F
F
E
R
S
E
wait
a
–BW
CY7C1470V25
Revised March 28, 2011
CY7C1472V25
CY7C1474V25
1
DQs
DQP
DQP
DQP
DQP
, CE
d
a
b
c
d
for CY7C1470V25
2
states.
, CE
408-943-2600
3
) and an
The
[+] Feedback

Related parts for CY7C1470V25_11

CY7C1470V25_11 Summary of contents

Page 1

TM 72-Mbit (2 M × 36/4 M × 18/1 M × 72) Pipelined SRAM with NoBL Architecture Features Pin-compatible and functionally equivalent to ZBT™ ■ Supports 250-MHz bus operations with zero wait states ■ Available speed grades are 250, 200 ...

Page 2

Logic Block Diagram - CY7C1472V25 (4 M × 18) A0, A1, A REGISTER 0 MODE CLK C CEN WRITE ADDRESS REGISTER 1 ADV/ CE1 CE2 CE3 ZZ Logic Block Diagram - CY7C1474V25 (1 M ...

Page 3

Contents Selection Guide ................................................................ 4 Pin Configurations ........................................................... 4 Pin Definitions .................................................................. 6 Functional Overview ........................................................ 8 Single Read Accesses ................................................ 8 Burst Read Accesses .................................................. 8 Single Write Accesses ................................................. 8 Burst Write Accesses .................................................. 9 Sleep Mode ................................................................. ...

Page 4

Selection Guide Maximum access time Maximum operating current Maximum CMOS standby current Pin Configurations DQPc 1 DQc 2 DQc DDQ DQc 6 DQc 7 DQc 8 DQc DDQ 11 ...

Page 5

Pin Configurations (continued) 165-ball FBGA (15 × 17 × 1.4 mm) Pinout NC/576M NC/1G CE2 A C DQP DDQ DDQ ...

Page 6

Pin Configurations (continued) 209-ball FBGA (14 × 22 × 1.76 mm) Pinout DQg DQg A B DQg DQg BWS C DQg DQg BWS D DQg DQg DQPg DQPc V DDQ F DQc DQc ...

Page 7

Pin Definitions (continued) Pin Name I/O Type ADV/LD Input- Advance/load input used to advance the on-chip address counter or load a new address. synchronous When HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a ...

Page 8

Pin Definitions (continued) Pin Name I/O Type NC(144M, – These pins are not connected. They will be used for expansion to the 144M, 288M, 576M and 288M, 1G densities. 576M, 1G) ZZ Input- ZZ “sleep” input. This active HIGH input ...

Page 9

Because the CY7C1470V25/CY7C1472V25/CY7C1474V25 are common I/O devices, data should not be driven into the device while the outputs are active. The output enable (OE) can be deasserted HIGH before ...

Page 10

Truth Table [ Address Operation Used Deselect cycle None Continue deselect cycle None Read cycle (begin burst) External Read cycle (continue burst) Next NOP/dummy read (begin burst) External Dummy read (continue burst) Next Write ...

Page 11

Function (CY7C1472V25) Read Write – no bytes written Write byte a – (DQ and DQP ) a a Write byte b – (DQ and DQP ) b b Write both bytes Function (CY7C1474V25) Read Write – no bytes written Write ...

Page 12

IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1470V25/CY7C1472V25/CY7C1474V25 incorporates a serial boundary scan test access port (TAP). This port operates in accordance with IEEE Standard 1149.1-1990 but does not have the set of functions required for full 1149.1 compliance. These ...

Page 13

Instruction Register Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO balls as shown in the TAP Controller Block Upon power-up, the instruction register is loaded ...

Page 14

CLK captured in the boundary scan register. Once the data is captured possible to shift out the data by putting the TAP into the Shift-DR ...

Page 15

V TAP AC Test Conditions Input pulse levels................................................V Input rise and fall time .....................................................1 ns Input timing reference levels........................................ 1.25 V Output reference levels ............................................... 1.25 V Test load termination supply voltage ........................... 1.25 V 2.5 V TAP AC ...

Page 16

Scan Register Sizes Register Name Instruction Bypass ID Boundary scan order–165-ball FBGA Boundary scan order–209-ball BGA Identification Codes Instruction Code EXTEST 000 Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces all SRAM outputs to ...

Page 17

Boundary Scan Exit Order (2 M × 36) Bit # 165-ball ID Bit # ...

Page 18

Boundary Scan Exit Order (1 M × 72) Bit # 209-ball ID Bit # ...

Page 19

Maximum Ratings Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested. Storage temperature ................................ –65 °C to +150 °C Ambient temperature with power applied ........................................... –55 °C to +125 °C Supply voltage on ...

Page 20

Electrical Characteristics (continued) [12, 13] Over the Operating Range Parameter Description I Automatic CE Max V SB3 power-down V current—CMOS inputs Automatic CE Max V SB4 power-down V current—TTL inputs Capacitance [15] Parameter Description C ...

Page 21

AC Test Loads and Waveforms 2.5 V I/O Test Load OUTPUT OUTPUT = 50   1. (a) 1.8 V I/O Test Load OUTPUT OUTPUT = 50  ...

Page 22

Switching Characteristics [16, 17] Over the Operating Range Parameter Description [18 (typical) to the first access read or write Power CC Clock t Clock cycle time CYC F Maximum operating frequency MAX t Clock HIGH CH t Clock ...

Page 23

Switching Waveforms [22, 23, 24] Read/Write/Timing CYC CLK CENS CENH CL CH CEN t t CES CEH CE ADV/ ADDRESS Data In-Out ...

Page 24

Switching Waveforms (continued) NOP, STALL and DESELECT Cycles 1 2 CLK CEN CE ADV/LD WE BWx A1 A2 ADDRESS Data In-Out (DQ) WRITE READ D(A1) Q(A2) [28, 29] ZZ Mode Timing CLK ZZ I SUPPLY ALL INPUTS (except ZZ) Outputs ...

Page 25

Ordering Information Cypress offers other versions of this type of product in many different configurations and features. The below table contains only the list of parts that are currently available.For a complete listing of all options, visit the Cypress website ...

Page 26

Package Diagrams Figure 1. 100-pin TQFP (14 × 20 × 1.4 mm), 51-85050 Figure 2. 165-ball FBGA (15 × 17 × 1.4 mm), 51-85165 Document Number: 38-05290 Rev. *L CY7C1470V25 CY7C1472V25 CY7C1474V25 51-85050 *D 51-85165 *B Page ...

Page 27

Figure 3. 209-ball FPBGA (14 × 22 × 1.76 mm), 51-85167 Document Number: 38-05290 Rev. *L CY7C1470V25 CY7C1472V25 CY7C1474V25 51-85167 *A Page [+] Feedback ...

Page 28

Acronyms Acronym Description CE chip enable CEN clock enable FPBGA fine-pitch ball grid array JTAG Joint Test Action Group NoBL No Bus Latency OE output enable TCK test clock TDI test data input TMS test mode select TDO test data ...

Page 29

Document History Page Document Title: CY7C1470V25/CY7C1472V25/CY7C1474V25 72-Mbit (2 M × 36/4 M × 18/1 M × 72) Pipelined SRAM with NoBL™ Architecture Document Number: 38-05290 Orig. of REV. ECN No. Issue Date Change ** 114677 08/06/02 PKS *A 121519 01/27/03 ...

Page 30

Document History Page (continued) Document Title: CY7C1470V25/CY7C1472V25/CY7C1474V25 72-Mbit (2 M × 36/4 M × 18/1 M × 72) Pipelined SRAM with NoBL™ Architecture Document Number: 38-05290 *I 472335 See ECN VKN *J 2898958 03/25/10 NJY *K 3054137 10/10/2010 NJY *L ...

Page 31

Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. Products Automotive cypress.com/go/automotive Clocks & ...

Related keywords