CAT9554 CATALYST [Catalyst Semiconductor], CAT9554 Datasheet - Page 2

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CAT9554

Manufacturer Part Number
CAT9554
Description
8-bit I2C and SMBus I/O Port with Interrupt
Manufacturer
CATALYST [Catalyst Semiconductor]
Datasheet

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CAT9554, CAT9554A
PIN CONFIGURATION
PIN DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
V
Voltage on Any Pin with
DC Current on I/O
DC Input Current ............................................. +20 mA
V
RELIABILITY CHARACTERISTICS
Notes:
(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
(2) This parameter is tested initially and after a design or process change that affects the parameter.
(3) Latch-up protection is provided for stresses up to 100 mA on address and data pins from -1V to V
Doc. No. 25088, Rev. B
CC
CC
L I
Respect to Ground ........................ –0.5V to +5.5V
S
V
S
only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this
specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
with Respect to Ground ............... –0.5V to +6.5V
Supply Current ............................................ 85mA
y
Z
T
O
m
A
H
C I
V SS
I/O0
I/O1
I/O2
I/O3
P
2 (
b
A0
A1
A2
9
(
( )
l o
4
) 2
/
1
1
1
1
) 3
1 -
2
3
8
1
7 -
T
3
4
5
6
TSSOP (Y)
2
SOIC (W)
S
1
2
3
4
5
6
7
8
S
O
P
E
0
16
15
14
13
12
10
11
S
9
to I/O
D
P
L
a
S
V CC
SDA
SCL
INT
I/O7
I/O6
I/O5
I/O4
a
a r
u
c t
7 ...........................................
c s
m
h
e
u -
t e
p
p
r e
i t
T
l i b
7
Q
2
1
1
1
1
1
1 -
1
6
y t i
1
5 -
F
5
6
2
3
4
1
0
N
(1)
J
R
E
+50 mA
e
D
J
e f
E
E
I/O0
I/O1
I/O2
A2
C
D
e r
E
n
S
P
1
2
3
4
C
c
a t
N I
e
I/O3 V SS I/O4 I/O5
S
A1
/ I
/ I
n
S
S
V
V
N I
TQFN (HV4)
T
O
O
d
a t
2
A
A
N
A
D
C
C
S
a
4 x 4 mm
Top View
e
0
2
1
0
4
A
T
n
C
S
A
L
d r
A0
t s
3 -
7 -
V
Package Power Dissipation
Junction Temperature ..................................... +150°C
Storage Temperature ........................ -65°C to +150°C
d
M
a
SS
M
J
E
d r
V CC SDA
E
Capability (T
e
Supply Current .......................................... 100mA
S
h t
1
D
7
o
2
d
2
12
11
10
n I
G
n I
I
P
9
A
A
A
S
S
t n
o
r e
r e
d
d
d
p
o r
p
SCL
INT
I/O7
I/O6
r e
w
d
d
d
u
u
l a i
l a i
u
e r
e r
e r
/ t
/ t
u r
r e
n
O
O
A
s s
s s
s s
d
t p
C
D
S
u
u
= 25°C) ................................... 1.0W
o l
a
p t
p t
u
2
O
n I
n I
n I
a t
M
1
p
k c
0
t u
t u
0
u
p
p
p
p
n i
0
CC
p t
0
t u
t u
t u
y l
0
P
P
t u
+1V.
o
o
0
1
2
Characteristics subject to change without notice
F
t r
t r
o (
U
0
4
p
N
e
o t
o t
© 2006 by Catalyst Semiconductor, Inc.
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