74LVC1G10 NXP [NXP Semiconductors], 74LVC1G10 Datasheet - Page 6

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74LVC1G10

Manufacturer Part Number
74LVC1G10
Description
Single 3-input NAND gate
Manufacturer
NXP [NXP Semiconductors]
Datasheet

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NXP Semiconductors
11. Dynamic characteristics
Table 8.
Voltages are referenced to GND (ground = 0 V). For test circuit see
[1]
[2]
[3]
12. Waveforms
74LVC1G10_1
Product data sheet
Symbol Parameter
t
C
pd
Fig 7. The input (A, B, C) to output (Y) propagation delays
PD
Typical values are measured at T
t
C
P
f
f
C
V
N = number of inputs switching;
pd
i
o
(C
D
CC
PD
= input frequency in MHz;
L
= output frequency in MHz;
is the same as t
= output load capacitance in pF;
= C
L
is used to determine the dynamic power dissipation (P
= supply voltage in V;
Measurement points are given in
V
propagation delay A, B and C to Y; see
power dissipation
capacitance
PD
V
OL
Dynamic characteristics
CC
and V
2
V
CC
f
o
2
OH
) = sum of the outputs.
PLH
f
are typical output voltage levels that occur with the output load.
i
N + (C
and t
PHL
Conditions
V
L
I
.
V
V
V
V
V
= GND to V
amb
CC
CC
CC
CC
CC
V
CC
= 1.65 V to 1.95 V
= 2.3 V to 2.7 V
= 2.7 V
= 3.0 V to 3.6 V
= 4.5 V to 5.5 V
= 25 C and V
2
Table
Y output
A, B, C,
f
o
) where:
input
9.
CC
; V
GND
V
V
OH
OL
V
CC
CC
Rev. 01 — 2 October 2007
I
Figure 7
= 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
= 3.3 V
V
M
D
t
PLH
in W).
V
[2]
[3]
M
Figure
Min
1.5
1.0
1.0
1.0
1.0
-
40 C to +85 C
8.
t
PHL
001aag692
Typ
4.7
3.0
3.0
2.6
1.9
12
[1]
Max
18.0
6.5
6.0
5.0
3.6
-
Single 3-input NAND gate
74LVC1G10
40 C to +125 C Unit
Min
1.5
1.0
1.0
1.0
1.0
-
© NXP B.V. 2007. All rights reserved.
Max
21.5
7.8
7.5
6.2
4.4
-
ns
ns
ns
ns
ns
pF
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