CY8C20110_0809 CYPRESS [Cypress Semiconductor], CY8C20110_0809 Datasheet - Page 12

• Manufacturer Part Number: CY8C20110_0809
• Manufacturer: CYPRESS [Cypress Semiconductor]

DC POR and LVD Specifications
DC Programming Specifications
This table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V and
-40°C<TA<85°C, 3.0V to 3.6V and -40°C<TA<85°C, or 2.4V to 3.0V and -40°C<TA<85°C, respectively. Typical parameters apply to
5V, 3.3V, or 2.7V at 25°C. These are for design guidance only. Flash Endurance and Retention specifications with the use of EEPROM
user module are valid only within the range: 25°C±20°C during the Flash Write operation.
Refer to the EEPROM user module data sheet instructions for EEPROM Flash Write requirements outside the 25°C±20°C temperature
window. Use of this User Module for Flash Writes outside this range must occur at a known die temperature (±20°C) and requires the
designer to configure the temperature as a variable rather than the default 25°C value hard coded into the API. All use of this UM API
outside the range of 25°C±20°C is at the user’s own risk. This risk includes overwriting the Flash cell (when above the allowable
temperature range) thereby reducing the data sheet specified endurance performance or underwriting the Flash cell (when below the
allowable temperature range) thereby reducing the data sheet specified retention.
Note
Document Number: 001-17345 Rev. *E
V
V
VLVD0
VLVD2
VLVD6
Parameter
Vdd
I
V
V
I
I
V
V
Flash
Flash
Flash
1. Commands involving Flash Writes (0x01, 0x02, 0x03) must be executed only within the same VCC voltage range detected at POR (power on, XRES, or command
DDP
ILP
IHP
PPOR0
PPOR1
Symbol
ILP
IHP
OLV
OHV
0x06) and above 2.7V. For register details, refer to CY8C201xx Register Reference Guide. If the user powers up the device in the 2.4V–3.6V range, Flash writes must
be performed only between 2.7V and 3.6V. If the user powers up the device in the 4.75V–5.25V range, Flash writes must be performed in that range only.
IWRITE
ENPB
ENT
DR
V
V
V
V
V
V
V
Supply Voltage for Flash Write Operations
Supply Current During Programming or Verify
Input Low Voltage During Programming or
Verify
Input High Voltage During Programming or
Verify
Input Current when Applying Vilp to P1[0] or
P1[1] During Programming or Verify
Input Current when Applying Vihp to P1[0] or
P1[1] During Programming or Verify
Output Low Voltage During Programming or
Verify
Output High Voltage During Programming or
Verify
Flash Endurance (per block)
Flash Endurance (total)
Flash Data Retention
DD
DD
DD
DD
DD
DD
DD
= 2.7V
= 3.3V, 5V
= 2.7V
= 3.3V
= 5V
Value/ PPOR Trip for
Value for LVD trip
Description
Description
2.39
2.75
3.98
[2]
Min
–
–
1,800,0
50,000
–1.0
Vdd
Min
2.7
2.2
00
10
–
–
–
–
–
2.36
2.60
2.45
2.92
4.05
Typ
Typ
–
5
–
–
–
–
–
–
–
–
–
Max
2.40
2.65
2.51
2.99
4.12
Vss +
Max
0.75
Vdd
0.8
0.2
1.5
25
Unit
–
–
–
–
–
V
V
V
V
V
V
2.5V during startup, reset from the XRES
pin, or reset from Watchdog.
Units
Years
DD
mA
mA
mA
V
V
V
V
V
–
–
must be greater than or equal to
Driving internal pull down
resistor.
Driving internal pull down
resistor.
Erase/write cycles per block.
Erase/write cycles.
Notes
CY8C20110
Notes
Page 12 of 18
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