ADG429BP AD [Analog Devices], ADG429BP Datasheet - Page 3

• Manufacturer Part Number: ADG429BP
• Description: LC2MOS Latchable 4-/8-Channel High Performance Analog Multiplexers
• Manufacturer: AD [Analog Devices]

REV. C
SINGLE SUPPLY
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
2
Specifications subject to change without notice.
Temperature ranges are as follows: B Version: –40 C to +85 C; T Version: –55 C to +125 C.
Guaranteed by design, not subject to production test.
Analog Signal Range
R
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
C
t
t
t
t
t
t
t
t
Charge Injection
OFF Isolation
Channel-to-Channel Crosstalk
C
C
C
I
TRANSITION
OPEN
ON
OFF
W
S
H
RS
DD
R
ON
, Address, Enable Setup Time
IN
S
D
D
, Address, Enable Hold Time
ADG428
ADG429
ADG428
ADG429
I
, Write Pulsewidth
ADG428
ADG429
ADG428
ADG429
, Reset Pulsewidth
ON
, C
INL
(OFF)
, Digital Input Capacitance
(OFF)
(EN, WR)
(EN, RS)
S
or I
(ON)
INH
1
D
INL
INH
S
(V
D
(OFF)
(OFF)
, I
DD
S
= +12 V, V
(ON)
2
SS
+25 C
90
10
8
250
350
25
200
300
80
300
4
–75
–60
85
11
40
20
54
34
20
100
0.005
0.5
0.015
1
0.008
1
0.02
1
0.01
1
= 0 V, GND = 0 V, WR = 0 V, RS = 2.4 V unless otherwise noted)
B Version
–40 C to
+85 C
0 to V
200
2.4
0.8
450
10
400
400
100
100
10
100
50
100
50
100
50
1
DD
+25 C
90
10
8
250
350
25
200
300
80
300
4
–75
–60
85
11
40
20
54
34
20
100
0.005
0.5
0.015
1
0.008
1
0.02
1
0.01
1
T Version
–3–
–55 C to
+125 C
0 to V
200
2.4
0.8
450
10
400
400
100
100
10
100
50
100
50
100
50
1
DD
Units
V
% max
nA typ
nA max
nA typ
nA max
nA typ
nA max
nA typ
nA max
nA max
nA max
V min
V max
pF typ
ns typ
ns max
ns min
ns typ
ns max
ns typ
ns max
ns min
ns min
ns min
ns min
pC typ
dB typ
dB min
dB typ
pF typ
pF typ
pF typ
pF typ
pF typ
A max
A typ
A max
typ
max
Test Conditions/Comments
V
0 V < V
V
Test Circuit 2
V
Test Circuit 3
V
Test Circuit 4
V
f = 1 MHz
R
V
Test Circuit 5
R
V
R
V
R
V
V
V
Test Circuit 10
R
V
R
Test Circuit 12
f = 1 MHz
f = 1 MHz
f = 1 MHz
V
S
D
D
D
S
IN
L
S1
L
S
L
S
L
S
S
S
L
L
IN
= 7 V rms, V
= V
= 1 M , C
= 1 k , C
= +5 V; Test Circuit 6
= 1 k , C
= +5 V; Test Circuit 7
= 1 k , C
= +5 V; Test Circuit 7
= +5 V
= 6 V, R
= 1 k , C
= 1 k , C
= +10 V, I
= 10 V/0 V, V
= 10 V/0 V, V
= 10 V/0 V, V
= 0 or V
= 0 V, V
D
S
= 10 V/0 V;
< 10 V, I
S
DD
EN
L
L
L
L
L
= 0 , C
S
ADG428/ADG429
L
= 35 pF;
= 35 pF;
= 35 pF;
= 15 pF, f = 100 kHz;
= 15 pF, f = 100 kHz;
EN
= 0 V
= –500 A
= 35 pF;
S
S
S8
= 0 V; Test Circuit 11
S
= 0 V/10 V;
= 0 V/10 V;
= –1 mA
= 0 V/10 V;
L
= 10 nF;