AT49BV160 ATMEL [ATMEL Corporation], AT49BV160 Datasheet - Page 22

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AT49BV160

Manufacturer Part Number
AT49BV160
Description
16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Manufacturer
ATMEL [ATMEL Corporation]
Datasheet

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Program Cycle Characteristics
Program Cycle Waveforms
Sector or Chip Erase Cycle Waveforms
Notes:
22
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
BP
BPVPP
AS
AH
DS
DH
WP
WPH
WC
RP
RH
EC
ECVPP
SEC
EPS
1. OE must be high only when WE and CE are both low.
2. For chip erase, the address should be 555. For sector erase, the address depends on what sector is to be erased.
3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H.
AT49BV/LV160(T)/161(T)
(See note 3 under Command Definitions.)
Parameter
Byte/Word Programming Time (V
Byte/Word Programming Time (V
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Write Pulse Width
Write Pulse Width High
Write Cycle Time
Reset Pulse Width
Reset High Time before Read
Chip Erase Cycle Time (V
Chip Erase Cycle Time (V
Sector Erase Cycle Time
Erase or Program Suspend Time
A0-A19
DATA
WE
OE
CE
A0 -A19
DATA
(1)
PP
PP
WE
OE
CE
< 4.5V)
> 4.5V)
t
AS
IHPP
PP
t
> 4.5V)
AS
< V
555
t
WC
WORD 0
t
PP
AH
555
AA
t
WC
< 4.5V)
t
AH
t
t
DS
WP
AA
AAA
t
t
DS
WP
WORD 1
t
DH
AAA
55
t
DH
55
555
t
WPH
WORD 2
555
80
PROGRAM CYCLE
t
WPH
A0
555
WORD 3
ADDRESS
AA
INPUT
DATA
AAA
WORD 4
55
Min
500
40
30
40
30
70
50
t
0
0
BP
Note 2
WORD 5
Note 3
555
t
EC
AA
Typ
300
20
10
Max
200
100
400
12
15
6
1427L–FLASH–02/03
seconds
seconds
Units
ms
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs

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