M24C32-DF_12 STMICROELECTRONICS [STMicroelectronics], M24C32-DF_12 Datasheet - Page 25

• Manufacturer Part Number: M24C32-DF_12
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M24C32-W M24C32-R M24C32-F M24C32-X M24C32-DF
Figure 10. AC measurement I/O waveform
Table 11.
1. Characterized only, not tested in production.
2. E2, E1, E0 input impedance when the memory is selected (after a Start condition).
Table 12.
1. Cycling performance for products identified by process letter K.
2. The Write cycle endurance is defined for groups of four data bytes located at addresses [4*N, 4*N+1,
3. A Write cycle is executed when either a Page Write, a Byte Write, a Write Identification Page or a Lock
Table 13.
1. For products identified by process letter K. The data retention behavior is checked in production. The 200-
Ncycle
Data retention
Symbol
Symbol
4*N+2, 4*N+3] where N is an integer. The Write cycle endurance is defined by characterization and
qualification.
Identification Page instruction is decoded. When using the Byte Write, the Page Write or the Write
Identification Page, refer also to
year limit is defined from characterization and qualification results.
C
C
Z
Z
IN
IN
H
L
endurance
Input capacitance (SDA)
Input capacitance (other pins)
Input impedance (E2, E1, E0, WC)
Input parameters
Cycling performance by groups of four bytes
Memory cell data retention
Parameter
Write cycle
(1)
Parameter
(2)
Parameter
TA 25 °C, V
TA = 85 °C, V
Section 5.1.5: ECC (Error Correction Code) and Write
Doc ID 4578 Rev 21
(1)
Test condition
CC
CC
TA = 55 °C
(min) < V
(min) < V
(2)
Test condition
CC
CC
(1)
< V
< V
Test condition
V
V
CC
CC
IN
IN
(max)
(max)
< 0.3 V
> 0.7 V
CC
CC
DC and AC parameters
4,000,000
1,200,000
Max.
Min.
200
Min.
500
cycling.
30
Write cycle
Max.
8
6
Unit
Year
Unit
Unit
25/40
pF
pF
k
k
(3)