M24C32-DF_12 STMICROELECTRONICS [STMicroelectronics], M24C32-DF_12 Datasheet - Page 27

• Manufacturer Part Number: M24C32-DF_12
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M24C32-W M24C32-R M24C32-F M24C32-X M24C32-DF
Table 15.
1. If the application uses the voltage range R device with 2.5 V < V
2. Only for devices operating at f
3. Characterized value, not tested in production.
4. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
Symbol
I
I
V
I
V
please refer to
completion of the internal write cycle t
I
CC0
CC1
V
I
LO
CC
OL
LI
IH
IL
Input leakage current
(E1, E2, SCL, SDA)
Output leakage current
Supply current (Read)
Supply current (Write)
Standby supply current
Input low voltage
(SCL, SDA, WC)
Input high voltage
(SCL, SDA)
Input high voltage
(WC, E2, E1, E0)
Output low voltage
DC characteristics (M24C32-R, device grade 6)
Table 14
Parameter
instead of this table.
C
max = 1 MHz (see see note
Doc ID 4578 Rev 21
W
V
device in Standby mode
SDA in Hi-Z, external voltage
applied on SDA: V
V
f
During t
Device not selected
V
1.8 V V
1.8 V V
1.8 V V
I
Test conditions
c
OL
(t
IN
CC
IN
= 1 MHz
W
= 1 mA, V
= V
= V
is triggered by the correct decoding of a Write instruction).
= 1.8 V, f
to those in
SS
SS
W
CC
CC
CC
, 1.8 V
(2)
or V
or V
< 2.5 V
< 2.5 V
< 2.5 V
c
CC
CC
= 400 kHz
CC
, V
= 1.8 V
(1)
(1)
Table
SS
CC
(in addition
(4)
in
or V
cc
,
Table
= 1.8 V
< 5.5 V and -40 °C < TA < +85 °C,
7)
CC
19).
0.75 V
0.75 V
DC and AC parameters
–0.45
Min.
CC
CC
0.25 V
V
CC
Max.
3
± 2
± 2
0.8
2.5
6.5
0.2
1
(3)
+0.6
CC
Unit
mA
mA
mA
27/40
µA
µA
µA
V
V
V
V