CY62256VLL-70SNE CYPRESS [Cypress Semiconductor], CY62256VLL-70SNE Datasheet - Page 4

• Manufacturer Part Number: CY62256VLL-70SNE
• Description: 256K (32K x 8) Static RAM
• Manufacturer: CYPRESS [Cypress Semiconductor]

Document #: 38-05057 Rev. *F
Capacitance
Thermal Resistance
AC Test Loads and Waveforms
Data Retention Characteristics
Data Retention Waveform
Notes:
Θ
Θ
V
I
t
t
5. Tested initially and after any design or process changes that may affect these parameters.
6. No input may exceed V
C
C
CCDR
CDR
R
DR
Parameter
Parameter
JA
JC
Parameter
[6]
IN
OUT
[6]
V
CE
CC
Parameter
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
[5]
Input Capacitance
Output Capacitance
OUTPUT
CC
R
V
R1
R2
V
INCLUDING
for Data Retention
TH
TH
CC
CC
Description
JIG AND
+ 0.3V.
Description
Description
SCOPE
50 pF
[5]
R1
[6]
V
CC(min)
t
CDR
(Over the Operating Range)
Equivalent to:
R2
V
V
Still Air, soldered on a 3 × 4.5 inch,
2-layer printed circuit board
IN
CC
T
A
> V
= 1.4V, CE > V
= 25°C, f = 1 MHz, V
CC
OUTPUT
– 0.3V or V
Test Conditions
Test Conditions
DATA RETENTION MODE
Conditions
1.750
THE VENIN EQUIVALENT
1100
1500
3.3V
645
CC
IN
V
GND
V
– 0.3V,
DR
CC
< 0.3V
CC
< 5 ns
> 1.4V
R
[6]
= V
TH
10%
CC(typ.)
Com’l
Ind’l
Auto
ALL INPUT PULSES
90%
V
TH
SOIC
68.45
26.94
Min.
1.4
t
RC
0
V
Max.
CC(min)
6
8
t
R
TSOPI
87.62
23.73
Typ.
90%
0.1
0.1
0.1
10%
Ohms
Ohms
Ohms
[2]
Units
Volts
< 5 ns
RTSOPI
CY62256V
87.62
23.73
Max.
50
3
6
Page 4 of 12
Unit
pF
pF
°C/W
°C/W
Unit
Unit
µA
ns
ns
V
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