CY14B104N CYPRESS [Cypress Semiconductor], CY14B104N Datasheet - Page 4

• Manufacturer Part Number: CY14B104N
• Description: 4 Mbit (512K x 8/256K x 16) nvSRAM
• Manufacturer: CYPRESS [Cypress Semiconductor]

Device Operation
The CY14B104L/CY14B104N nvSRAM is made up of two
functional components paired in the same physical cell. They are
an SRAM memory cell and a nonvolatile QuantumTrap cell. The
SRAM memory cell operates as a standard fast static RAM. Data
in the SRAM is transferred to the nonvolatile cell (the STORE
operation), or from the nonvolatile cell to the SRAM (the RECALL
operation). Using this unique architecture, all cells are stored and
recalled in parallel. During the STORE and RECALL operations,
SRAM
CY14B104L/CY14B104N supports infinite reads and writes
similar to a typical SRAM. In addition, it provides infinite RECALL
operations from the nonvolatile cells and up to 200K STORE
operations. See the
page 15 for a complete description of read and write modes.
SRAM Read
The CY14B104L/CY14B104N performs a read cycle when CE
and OE are LOW and WE and HSB are HIGH. The address
specified on pins A
data bytes or 262,144 words of 16 bits each are accessed. Byte
enables (BHE, BLE) determine which bytes are enabled to the
output, in the case of 16-bit words. When the read is initiated by
an address transition, the outputs are valid after a delay of t
(read cycle 1). If the read is initiated by CE or OE, the outputs
are valid at t
data output repeatedly responds to address changes within the
t
input pins. This remains valid until another address change or
until CE or OE is brought HIGH, or WE or HSB is brought LOW.
SRAM Write
A write cycle is performed when CE and WE are LOW and HSB
is HIGH. The address inputs must be stable before entering the
write cycle and must remain stable until CE or WE goes HIGH at
the end of the cycle. The data on the common IO pins DQ
are written into the memory if the data is valid t
of a WE controlled write or before the end of an CE controlled
write. The Byte Enable inputs (BHE, BLE) determine which bytes
are written, in the case of 16bit words. It is recommended that
OE be kept HIGH during the entire write cycle to avoid data bus
contention on common IO lines. If OE is left LOW, internal
circuitry turns off the output buffers t
AutoStore Operation
The CY14B104L/CY14B104N stores data to the nvSRAM using
one of the following three storage operations: Hardware Store
activated by HSB; Software Store activated by an address
sequence; AutoStore on device power down. The AutoStore
operation is a unique feature of QuantumTrap technology and is
enabled by default on the CY14B104L/CY14B104N.
During a normal operation, the device draws current from V
charge a capacitor connected to the V
charge is used by the chip to perform a single STORE operation.
If the voltage on the V
automatically disconnects the V
operation is initiated with power provided by the V
Document #: 001-07102 Rev. *L
AA
access time without the need for transitions on any control
read
ACE
and
or at t
0-18
“Truth Table For SRAM Operations”
DOE
write
or A
CC
, whichever is later (read cycle 2). The
0-17
pin drops below V
operations
determines which of the 524,288
CAP
HZWE
pin from V
after WE goes LOW.
CAP
are
SD
SWITCH
pin. This stored
inhibited.
CC
before the end
CAP
. A STORE
, the part
capacitor.
CC
0–15
The
on
AA
to
Figure 4
(V
Characteristics
the V
up should be placed on WE to hold it inactive during power up.
This pull up is only effective if the WE signal is tri-state during
power up. Many MPU’s will tri-state their controls on power up.
This should be verified when using the pull up. When the
nvSRAM comes out of power-on-recall, the MPU must be active
or the WE held inactive until the MPU comes out of reset.
To reduce unnecessary nonvolatile stores, AutoStore and
hardware store operations are ignored unless at least one write
operation has taken place since the most recent STORE or
RECALL cycle. Software initiated STORE cycles are performed
regardless of whether a write operation has taken place. The
HSB signal is monitored by the system to detect if an AutoStore
cycle is in progress.
Figure 4. AutoStore Mode
Hardware STORE Operation
The CY14B104L/CY14B104N provides the HSB
and acknowledge the STORE operations. Use the HSB pin to
request a hardware STORE cycle. When the HSB pin is driven
LOW, the CY14B104L/CY14B104N conditionally initiates a
STORE operation after t
begins if a write to the SRAM has taken place since the last
STORE or RECALL cycle. The HSB pin also acts as an open
drain driver that is internally driven LOW to indicate a busy
condition when the STORE (initiated by any means) is in
progress.
When HSB is driven LOW by any means, SRAM read and write
operations that are in progress are given time to complete before
the STORE operation is initiated. After HSB goes LOW, the
CY14B104L/CY14B104N continues SRAM operations for
t
During any STORE operation, regardless of how it is initiated,
the CY14B104L/CY14B104N continues to drive the HSB pin
LOW, releasing it only when the STORE is complete. Upon
completion
CY14B104L/CY14B104N remains disabled until the HSB pin
returns HIGH. Leave the HSB unconnected if it is not used.
DELAY
CAP
CAP
) for automatic store operation. Refer to
.
shows the proper connection of the storage capacitor
pin is driven to V
on page 7 for the size of V
of
WE
CY14B104L, CY14B104N
the
Vcc
Vcc
V
SS
DELAY
CC
by a regulator on the chip. A pull
V
. An actual STORE cycle only
STORE
CAP
0.1uF
CAP
operation,
. The voltage on
[6]
V
CAP
DC Electrical
pin to control
Page 4 of 25
the
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