HYB18M512160BF-7.5 QIMONDA [Qimonda AG], HYB18M512160BF-7.5 Datasheet - Page 12
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HYB18M512160BF-7.5
Manufacturer Part Number
HYB18M512160BF-7.5
Description
DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant
Manufacturer
QIMONDA [Qimonda AG]
Datasheet
1.HYB18M512160BF-7.5.pdf
(24 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HYB18M512160BF-7.5
Manufacturer:
HYNIX
Quantity:
11 200
Company:
Part Number:
HYB18M512160BF-7.5
Manufacturer:
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3
3.1
Table 8
Parameter
Power Supply Voltage
Power Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Operation Case Temperature
Storage Temperature
Power Dissipation
Short Circuit Output Current
Attention: Stresses above those listed here may cause permanent damage to the device. Exposure to
Table 9
Parameter
Input capacitance: CK, CK
Delta input capacitance: CK, CK
Input capacitance: all other input-only pins
Delta input capacitance: all other input-only pins
Input/output capacitance: DQ, DQS, DM
Delta input/output capacitance: DQ, DQS, DM
1) These values are not subject to production test but verified by device characterization.
2) Input capacitance is measured according to JEP147 procedure for measuring capacitance using a vector network analyzer.
3) Although DM is an input-only pin, it’s input capacitance models the input capacitance of the DQ and DQS pins.
Internet Data Sheet
VDD, VDDQ are applied and all other pins (except the pin under test) are floating. DQ’s should be in high impedance state.
This may be achieved by pulling CKE to low level.
absolute maximum rating conditions for extended periods may affect device reliability.
Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the integrated circuit.
Electrical Characteristics
Operating Conditions
Absolute Maximum Ratings
Pin Capacitances
1)2)3)
Commercial
Extended
Symbol
12
Symbol
CD
CD
CD
C
C
C
V
V
T
I
V
V
IO
T
T
P
I1
I2
OUT
DDQ
OUT
STG
IO
I1
I2
DD
IN
C
C
D
min.
1.5
1.5
3.5
–
–
–
min.
-0.3
-0.3
-0.3
-0.3
-25
-55
0
–
–
Values
512-Mbit DDR Mobile-RAM
Values
HY[B/E]18M512160BF
Electrical Characteristics
max.
V
V
0.25
2.5
2.5
0.5
4.5
0.5
DDQ
DDQ
max.
+150
07092007-3E44-UTNM
+70
+85
2.7
2.7
0.7
50
+ 0.3
+ 0.3
Rev.1.80, 2006-11
Unit
pF
pF
pF
pF
pF
pF
Unit
mA
W
V
V
V
V
C
C
C