MT28F320J3FS-12 MICRON [Micron Technology], MT28F320J3FS-12 Datasheet - Page 31
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MT28F320J3FS-12
Manufacturer Part Number
MT28F320J3FS-12
Description
Q-FLASHTM MEMORY
Manufacturer
MICRON [Micron Technology]
Datasheet
1.MT28F320J3FS-12.pdf
(52 pages)
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128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_7.p65 – Rev. 6, Pub. 8/02
ERASE Command 20h,
Issue Single BLOCK
Write Confirm D0h
Block(s) Complete
Check if Desired
Block Address
Block Address
Read Status
Erase Flash
Full Status
Register
SR7 =
Start
BLOCK ERASE Flowchart
1
No
Figure 7
Suspend Erase
No
Yes
Suspend
Erase Loop
31
BUS
OPERATION COMMAND
WRITE
WRITE
READ
STANDBY
The erase confirm byte must follow erase setup.
This device does not support erase queuing.
Full status check can be done after all erase and write
sequences complete. Write FFh after the last operation to
reset the device to read array mode.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
ERASE
BLOCK
ERASE
CONFIRMED Addr = Block Address
128Mb, 64Mb, 32Mb
Q-FLASH MEMORY
COMMENTS
Data = 20h
Addr = Block Address
Data = D0h
Status register data with
the device enabled; OE#
LOW updates SR
Addr = X
Check SR7
1 = ISM Ready
0 = ISM Busy
©2002, Micron Technology, Inc.
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