ADP2147ACBZ-130-R7 AD [Analog Devices], ADP2147ACBZ-130-R7 Datasheet - Page 4

• Manufacturer Part Number: ADP2147ACBZ-130-R7
• Description: Compact, 800 mA, 3 MHz, Simple DVS, Buck Regulator Input voltage: 2.3 V to 5.5 V
• Manufacturer: AD [Analog Devices]

ADP2147
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
VIN, EN, VSEL
VOUT, SW to GND
Temperature Range
Lead Temperature Range
ESD Model
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. These are stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL DATA
Absolute maximum ratings apply individually only, not in
combination.
The ADP2147 can be damaged if the junction temperature limit is
exceeded. Monitoring ambient temperature does not guarantee
that the junction temperature (T
temperature limit. In applications with high power dissipation
and poor thermal resistance, the maximum ambient temperature
may need to be derated. In applications with moderate power
dissipation and low printed circuit board (PCB) thermal
resistance, the maximum ambient temperature can exceed the
maximum limit if the junction temperature is within specification
limits. The junction temperature (T
on the ambient temperature (T
device (P
package (θ
from the ambient temperature (T
using the following formula:
Operating Ambient
Operating Junction
Storage Temperature
Soldering (10 sec)
Vapor Phase (60 sec)
Infrared (15 sec)
Human Body
Charged Device
Machine
T
J
= T
D
), and the junction-to-ambient thermal resistance of the
JA
A
). Maximum junction temperature (T
+ (P
D
× θ
JA
)
A
), the power dissipation of the
J
) is within the specified
A
) and power dissipation (P
J
) of the device is dependent
Rating
−0.4 V to +6.5 V
−1.0 V to (V
−40°C to +85°C
−40°C to +125°C
−65°C to +150°C
−65°C to +150°C
300°C
215°C
220°C
±1500 V
±500 V
±100 V
J
) is calculated
IN
+ 0.2 V)
D
Rev. 0 | Page 4 of 16
)
Junction-to-ambient thermal resistance (θ
based on modeling and calculation using a 4-layer board. The
junction-to-ambient thermal resistance is highly dependent on
the application and board layout. In applications where high
maximum power dissipation exists, close attention to thermal
board design is required. The value of θ
PCB material, layout, and environmental conditions. The specified
values of θ
to JEDEC JESD 51-9 for detailed information pertaining to board
construction. For additional information, see the
Application Note, MicroCSP™ Wafer Level Chip Scale Package.
Ψ
measured in units of °C/W. The package Ψ
and calculation using a 4-layer board. The JESD51-12, Guidelines
for Reporting and Using Package Thermal Information, states that
thermal characterization parameters are not the same as thermal
resistances. Ψ
multiple thermal paths rather than through a single path, which
is the procedure for measuring thermal resistance, θ
fore, Ψ
package as well as radiation from the package, factors that make
Ψ
junction temperature (T
(T
Refer to JEDEC JESD51-8 and JESD51-12 for more detailed
information about Ψ
THERMAL RESISTANCE
θ
device soldered in a circuit board for surface-mount packages.
Table 4. Thermal Resistance
Package Type
6-Ball WLCSP
ESD CAUTION
JA
JB
JB
B
) and power dissipation (P
and Ψ
is the junction-to-board thermal characterization parameter
more useful in real-world applications than θ
T
J
JB
= T
thermal paths include convection from the top of the
JB
JA
B
are specified for the worst-case conditions, that is, a
are based on a 4-layer, 4 in. × 3 in. circuit board. Refer
+ (P
JB
measures the component power flowing through
D
× Ψ
JB
JB
.
J
)
) is calculated from the board temperature
D
) using the formula:
θ
170
JA
JA
may vary, depending on
JB
JA
is based on modeling
) of the package is
Ψ
80
JB
JB
AN-617
. Maximum
JB
. There-
Unit
°C/W