STM8360T SAMHOP [SamHop Microelectronics Corp.], STM8360T Datasheet - Page 7

• Manufacturer Part Number: STM8360T
• Description: Dual Enhancement Mode Field Effect Transistor (N and P Channel)
• Manufacturer: SAMHOP [SamHop Microelectronics Corp.]

STM8360T
P-Channel
Figure 3. On-Resistance vs. Drain Current
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
120
100
25
20
15
10
80
60
40
20
0
5
0
-50 -25
Figure 5. Gate Threshold Variation
Figure 1. Output Characteristics
0
1
-V
Tj, Junction Temperature( ° C )
DS
0.5
, Drain-to-Source Voltage(V)
and Gate Voltage
5
0
with Temperature
-I
D
, Drain Current(A)
1
25
10
V
V
V
G S
G S
G S
V
50
1.5
=-4.5V
=-10V
G S
=-10V
=-8V
V
15
75
G S
=-4.5V
2
V
I
D
V
100 125 150
DS
=-250uA
G S
V
=V
G S
=-4V
20
2.5
=-3V
G S
25
3
7
Figure 4. On-Resistance Variation with Drain
1.10
1.05
1.00
0.90
0.85
0.95
1.15
Figure 6. Breakdown Voltage Variation
2.0
1.8
1.6
1.4
1.2
1.0
0.8
20
16
12
4
8
0
Figure 2. Transfer Characteristics
-50 -25
0
0
I
D
-V
Tj, Junction Temperature( ° C )
Current and Temperature
Tj, Junction Temperature( ° C )
=-250uA
25
0.8
GS
, Gate-to-Source Voltage(V)
T j=125 C
with Temperature
0
1.6
50
25
V
I
D
G S
=-5.5A
50
=-10V
75
2.4
-55 C
75
100
V
I
3.2
G S
D
www.samhop.com.tw
=-4.4A
100 125 150
=-4.5V
125
4.0
25 C
T j ( ° C )
150
4.8
Nov,21,2008
Ver 1.0