IPS612-05B IPS [IP SEMICONDUCTOR CO., LTD.], IPS612-05B Datasheet - Page 2

• Manufacturer Part Number: IPS612-05B
• Description: silicon controlled rectifiers
• Manufacturer: IPS [IP SEMICONDUCTOR CO., LTD.]

ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
STATIC CHARACTERISTICS
Symbol
I
Symbol
DRM /
Symbol
R
dV/dt
V
V
I
th
GT
I
I
GT
GD
V
L
H
(j – c)
TM
I
RRM
Required DC gate current to trigger
Required DC voltage to trigger
(anode supply = 6V, resistive load)
DC gate voltage not to trigger
I
Holding current
V
G =
(
D
Tj = 110℃, V
= 67% V
Tel : [phone], Fax : [phone], [e-mail]
1.2 I
I
TM
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Junction to case
= 24A, tp = 380uS
GT
V
V
D
R
Test Condition
DRM
Test Conditions
= V
= V
DRM
Parameter
DRM
RRM
gate open Tj = 125 ℃
= rated value)
Tj = 125℃
Tj = 25℃
Tj = 25℃
TO-220B
(Tj = 25 ℃ unless otherwise specified)
MAX
MAX
MAX
MAX
MAX
MIN
(MAX)
Value
Value
1.6
2.8
5
2
05
30
15
40
5
IPS612-xxB
IPS612-xxB
1.3
0.2
200
15
15
60
30
Unit
Unit
℃/W
mA
uA
V
Unit
V/us
mA
mA
mA
V
V
2