BD9882F_09 ROHM [Rohm], BD9882F_09 Datasheet - Page 4
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BD9882F_09
Manufacturer Part Number
BD9882F_09
Description
Silicon Monolithic Integrated Circuit
Manufacturer
ROHM [Rohm]
Datasheet
1.BD9882F_09.pdf
(5 pages)
〇
10. By STB voltage, BD9882F and BD9882FV are changed to 2 states. Therefore, do not input STB pin voltage between one
11.The pin connected a connector need to connect to the resistor for electrical surge destruction.
12.This IC is a monolithic IC which (as shown is Fig-1)has P
1. When designing the external circuit, including adequate margins for variation between external devices and the IC.Use
2. Recommended Operating Range
3. Mounting failures, such as misdirection or miscounts, may harm the device.
4. A strong electromagnetic field may cause the IC to malfunction.
5. The GND pin should be the location within ±0.3V compared with the PGND pin
6. The BD9882F and BD9882FV incorporate a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit
7. Absolute maximum ratings are those values that, if exceeded, may cause the life of a device to become significantly
8. About the external FET, the parasitic Capacitor may cause the gate voltage to change, when the drain voltage is switching.
9. On operating Slow Start Control (SS is less than 2.2V), It does not operate Timer Latch.
NOTE FOR USE
Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result in
mutual
use methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate)
voltage to an input pin.
is formed from this P layer of each pin. For example, the relation between each potential is as follows,
The circuit functionality is guaranteed within of ambient temperature operation range as long as it is within
recommended operating range. The standard electrical characteristic values cannot be guaranteed at other voltages
in the operating ranges, however, the variation will be small.
(TSD circuit) is designed only to shut the IC off to prevent runaway thermal operation. It is not designed to protect
the IC or guarantee its operation. Do not continue to use the IC after operating this circuit or use the IC in an
environment where the operation of the thermal shutdown circuit is assumed.
shortened. Moreover, the exact failure mode caused by short or open is not defined. Physical countermeasures, such
as a fuse, need to be considered when using a device beyond its maximum ratings.
Make sure to leave adequate margin for this IC variation.
adequate margins for steady state and transient characteristics.
state and the other state (0.8~1.8V).
○(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.)
○(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.)
interference among circuits as well as operation faults and physical damage. Accordingly you must not
(PinA)
N
P
Fig-1 Simplified structure of a Bipolar IC
+
Parasitic diode
(PinA)
Resistance
GND
P substrate
N
Parasitic diode
GND
P
P
Other adjacent components
+
REV. A
(PinB)
Parasitic diode
+
N
substrate and between the various pins. A P-N junction
(PinB)
C
C
Transistor (NPN)
B
P substrate
B
N
N
N
B
C
E
GND
GND
E
C
Parasitic diode
E
N
GND
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