CM200DU-24NFH_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM200DU-24NFH_09 Datasheet
CM200DU-24NFH_09
Related parts for CM200DU-24NFH_09
CM200DU-24NFH_09 Summary of contents
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... Gradient amplifier, Induction heating, power supply, etc. OUTLINE DRAWING & CIRCUIT DIAGRAM 108 (7.5) 93 ±0. C2E1 E2 25 3-M6 NUTS 4-φ6. 5 MOUNTING HOLES LABEL CM200DU-24NFH HIGH POWER SWITCHING USE ¡I C ................................................................... ¡V CES ......................................................... ¡Insulated Type ¡2-elements in a pack T measured point C (7.5) 14 C2E1 C1 25 21.5 2.5 ...
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... E GE IGBT part (1/2 module) FWDi part (1/2 module) *2 Case to heat sink, Thermal compound Applied IGBT part (1/2 module) FWDi part (1/2 module) ) does not exceed MITSUBISHI IGBT MODULES CM200DU-24NFH HIGH POWER SWITCHING USE Ratings 1200 ±20 200 (Note 2) 400 (Note 2) (Note 2) 200 (Note 2) ...
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... 250 300 350 400 ( 25° MITSUBISHI IGBT MODULES CM200DU-24NFH HIGH POWER SWITCHING USE TRANSFER CHARACTERISTICS ( TYPICAL ) V = 10V 25° 125° GATE-EMITTER VOLTAGE V GE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS ...
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... Per unit base = 0.24K/W th(j–c) –3 10 –3 10 – CM200DU-24NFH ( TYPICAL ) Conditions 600V CC = ±15V 1.6Ω 25°C j Inductive load 1 10 ...