2SK3018UB ROHM [Rohm], 2SK3018UB Datasheet - Page 3

• Manufacturer Part Number: 2SK3018UB
• Description: 2.5V Drive Nch MOSFET
• Manufacturer: ROHM [Rohm]

 Electrical characteristic curves
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0.15
0.05
Fig.1 Typical output characteristics
2SK3018UB
0.1
Fig.4 Static drain-source on-state
0
0
0.5
Fig.7 Static drain-source on-state
50
20
10
9
8
7
6
5
4
3
2
1
0
−50
5
2
1
0.001
DRAIN-SOURCE VOLTAGE : V
CHANNEL TEMPERATURE : Tch (°C)
0.002
resistance vs. drain current (Ι)
−25
1
resistance vs. channel
temperature
Ta=125°C
4V
3.5V
DRAIN CURRENT : I
0.005
I
−25°C
0
D
75°C
25°C
=100mA
2
V
25
0.01 0.02
GS
2.5V
2V
= 1.5V
3V
50
3
0.05
75
I
D
=10mA
D
100 125
0.1
4
Ta=25°C
Pulsed
(A)
DS
V
Pulsed
V
Pulsed
(V)
GS
GS
0.2
=4V
=4V
5
150
0.5
Fig.2 Typical transfer characteristics
200m
100m
Fig.5 Static drain-source on-state
0.5m
0.2m
0.1m
50m
20m
10m
5m
2m
1m
0.5
50
20
10
0.005
0.002
0.001
5
2
1
0.001
0
0.05
0.02
0.01
0.5
0.2
0.1
Fig.8 Forward transfer
V
Pulsed
0.0001
DS
GATE-SOURCE VOLTAGE : V
0.002
resistance vs. drain current (ΙΙ)
=3V
0.0002 0.0005 0.001 0.002
Ta=125°C
Ta=−25°C
admittance vs. drain current
DRAIN CURRENT : I
1
0.005
−25°C
125°C
DRAIN CURRENT : I
75°C
25°C
25°C
75°C
0.01 0.02
3/5
2
Ta=125°C
0.005 0.01 0.02
−25°C
0.05
75°C
25°C
D
0.1
3
(A)
D
V
Pulsed
0.05
GS
(A)
GS
0.2
(V)
0.1 0.2
=2.5V
V
Pulsed
DS
=3V
4
0.5
0.5
200m
100m
0.5m
0.2m
0.1m
50m
20m
10m
5m
2m
1m
1.5
0.5
15
10
0
5
2
0
0
1
−50
0
Fig.3 Gate threshold voltage vs.
Fig.9 Reverse drain current vs.
Fig.6 Static drain-source
SOURCE-DRAIN VOLTAGE : V
GATE-SOURCE VOLTAGE : V
CHANNEL TEMPERATURE : Tch (°C)
−25
channel temperature
source-drain voltage (Ι)
5
on-state resistance vs.
gate-source voltage
0
0.5
25
10
2011.10 - Rev.A
50
I
I
D
D
Ta=125°C
=10mA
=1mA
75
1
−25°C
Data Sheet
75°C
25°C
15
100 125 150
Ta=25°C
Pulsed
GS
V
I
Pulsed
V
Pulsed
SD
D
DS
GS
=0.1mA
(V)
(V)
=3V
=0V
1.5
20