2SK3018_1 ROHM [Rohm], 2SK3018_1 Datasheet - Page 2

• Manufacturer Part Number: 2SK3018_1
• Description: 2.5V Drive Nch MOS FET
• Manufacturer: ROHM [Rohm]

Transistor
Fig.4 Static drain-source on-state
Static drain-source on-state
resistance
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Electrical characteristics (Ta=25°C)
Electrical characteristic curves
0.15
0.05
Fig.1 Typical output characteristics
0.1
0
0.5
0
50
20
10
5
2
1
0.001
resistance vs. drain current ( Ι )
DRAIN-SOURCE VOLTAGE : V
0.002
Parameter
1
Ta=125 °C
4V
3.5V
DRAIN CURRENT : I
0.005 0.01 0.02
−25 °C
75 °C
25 °C
V
2
GS
2.5V
2V
=1.5V
3V
3
0.05
D
0.1
(A)
4
Ta=25°C
Pulsed
DS
V
Pulsed
(V)
GS
0.2
V
Symbol
R
R
V
=4V
(BR)DSS
|Y
t
t
I
I
C
C
DS(on)
DS(on)
C
GS(th)
d(on)
d(off)
GSS
DSS
5
t
t
oss
fs
iss
rss
r
f
0.5
|
Fig.5 Static drain-source on-state
Fig.2 Typical transfer characteristics
200m
100m
0.5m
0.2m
0.1m
Min.
50m
20m
10m
0.8
30
20
5m
2m
1m
−
−
−
−
−
−
−
−
−
−
−
0.5
50
20
10
0
5
2
1
0.001
resistance vs. drain current (ΙΙ)
V
Pulsed
DS
GATE-SOURCE VOLTAGE : V
0.002
=3V
Typ.
13
15
35
80
80
Ta=125°C
−
−
−
−
5
7
−
9
4
1
DRAIN CURRENT : I
0.005 0.01 0.02
−25°C
75°C
25°C
Max.
1.5
±1
13
−
1
8
−
−
−
−
−
−
−
−
2
Ta=125 °C
−25 °C
75 °C
25 °C
0.05
Unit
mS
µA
µA
pF
pF
pF
ns
ns
ns
ns
Ω
Ω
V
V
D
0.1
3
(A)
V
Pulsed
GS
GS
0.2
(V)
=2.5V
V
I
V
V
I
I
V
V
V
f = 1MHz
I
V
R
R
D
D
D
D
GS
DS
DS
DS
DS
GS
GS
L
G
= 10µA, V
= 10mA, V
= 1mA, V
= 10mA, V
= 500Ω
= 10Ω
4
0.5
= 30V, V
= 3V, I
= 3V, I
= 5V
= ±20V, V
= 0V
= 5V
D
D
GS
1.5
0.5
= 100µA
= 10mA
Conditions
GS
GS
DD
2
0
1
−50
15
10
GS
Fig.3 Gate threshold voltage vs.
0
DS
5
= 2.5V
0
= 0V
= 4V
= 0V
CHANNEL TEMPERATURE : Tch ( °C )
Fig.6 Static drain-source
= 0V
−25
5V
GATE-SOURCE VOLTAGE : V
channel temperature
0
5
on-state resistance vs.
gate-source voltage
25
Rev.B
50
10
2SK3018
I
I
D
D
75
=0.1A
=0.05A
100 125 150
15
V
I
Pulsed
D
DS
Ta=25°C
Pulsed
GS
=0.1mA
=3V
(V)
2/3
20