2SK3468-01_03 FUJI [Fuji Electric], 2SK3468-01_03 Datasheet - Page 3

• Manufacturer Part Number: 2SK3468-01_03
• Description: N-CHANNEL SILICON POWER MOSFET
• Manufacturer: FUJI [Fuji Electric]

2SK3468-01
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
Typical Forward Characteristics of Reverse Diode
24
22
20
18
16
14
12
10
10
8
6
4
2
0
1
0.00
0
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=6A,VGS=10V
-50
Typical Gate Charge Characteristics
IF=f(VSD):80µs Pulse test,Tch=25°C
VGS=f(Qg):ID=12A, Tch=25°C
0.25
10
-25
0.50
20
0
0.75
30
25
480V
max.
VSD [V]
Qg [nC]
Tch [ C]
1.00
40
50
300V
Vcc= 120V
1.25
50
75
typ.
1.50
60
100
1.75
70
125
2.00
150
80
100p
10n
10p
1n
1p
10
10
10
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
2
1
0
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
-50
-1
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V, VGS=10V, RG=10
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250uA
-25
td(on)
10
10
0
0
0
25
FUJI POWER MOSFET
VDS [V]
ID [A]
Tch [ C]
10
50
td(off)
1
max.
min.
75
10
100
10
2
1
Ciss
Coss
Crss
125
tr
tf
10
150
3
3