2SC5624VH-TL-E RENESAS [Renesas Technology Corp], 2SC5624VH-TL-E Datasheet - Page 3

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2SC5624VH-TL-E

Manufacturer Part Number
2SC5624VH-TL-E
Description
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
2SC5624
Rev.3.00, Feb.21.2005, page 3 of 6
0.4
1.0
0.8
0.6
0.2
20
16
12
20
16
12
8
4
0
0
8
4
0
0.1
1
1
f = 1.8 GHz
Collector to Base Voltage
S21 Parameter vs. Collector Current
Collector Output Capacitance vs.
f = 2 GHz
Power Gain vs. Collector Current
0.2
2
2
Collector to Base Voltage
Collector Current
Collector Current
0.5
5
5
10
10
1
20
20
2
I
V
C
I
I
f = 1 MHz
V
C
E
CE
V
CE
= 0
(mA)
CB
(mA)
= 2 V
50
50
= 2 V
5
(V)
100
100
10
50
40
30
20
10
0
5
4
0
3
1
2
1
1
Noise Figure vs. Collector Current
Gain Bandwidth Product vs.
2
2
Collector Current
Collector Current
Collector Current
5
5
10
10
V
f = 1.8 GHz
20
20
CE
I
I
C
C
V
= 2 V
CE
(mA)
(mA)
= 2 V
50
50
100
100

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