2SC5624VH-TL-E RENESAS [Renesas Technology Corp], 2SC5624VH-TL-E Datasheet - Page 4
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2SC5624VH-TL-E
Manufacturer Part Number
2SC5624VH-TL-E
Description
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
1.2SC5624VH-TL-E.pdf
(7 pages)
2SC5624
Rev.3.00, Feb.21.2005, page 4 of 6
180°
−150°
0
−.2
150°
.2
−.4
.4
Condition ;
100 to 3000 MHz (100 MHz step)
S11 Parameter vs. Frequency
Condition ;
S12 Parameter vs. Frequency
100 to 3000 MHz (100 MHz step)
−120°
.2
120°
−.6
.6
.4
−.8
.8
.6 .8 1
V
V
CE
CE
−90°
−1
90°
= 2 V, I
1
= 2 V, I
1.5
C
Scale: 0.02 / div.
−1.5
C
2
= 30 mA
1.5
= 30 mA
−60°
60°
3 4 5
−2
2
3
10
−3
−30°
30°
4
−4
5
−5
10
−10
0°
180°
−150°
150°
0
−.2
.2
−.4
.4
S21 Parameter vs. Frequency
Condition ;
Condition ;
100 to 3000 MHz (100 MHz step)
100 to 3000 MHz (100 MHz step)
S22 Parameter vs. Frequency
−120°
.2
120°
−.6
.6
.4
−.8
.8
.6 .8 1
V
V
CE
CE
−90°
−1
90°
1
= 2 V, I
= 2 V, I
1.5
Scale: 12 / div.
C
−1.5
C
2
1.5
= 30 mA
= 30 mA
−60°
60°
3 4 5
−2
2
3
10
−3
−30°
30°
4
−4
5
−5
10
−10
0°