2SK3501-01_03 FUJI [Fuji Electric], 2SK3501-01_03 Datasheet - Page 3

• Manufacturer Part Number: 2SK3501-01_03
• Description: N-CHANNEL SILICON POWER MOSFET
• Manufacturer: FUJI [Fuji Electric]

2SK3501-01
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
10
24
22
20
18
16
14
12
10
1
8
6
4
2
0
0.00
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
0
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5A,VGS=10V
-50
Typical Gate Charge Characteristics
VGS=f(Qg):ID=10A, Tch=25°C
0.25
10
-25
0.50
20
0
0.75
30
25
Tch [ C]
480V
VSD [V]
Qg [nC]
1.00
40
50
300V
Vcc= 120V
max.
1.25
50
75
typ.
1.50
100
60
1.75
125
70
2.00
150
80
100p
10n
10p
10
10
10
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1n
1p
2
1
0
10
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
-50
t=f(ID):Vcc=300V, VGS=10V, RG=10
Typical Switching Characteristics vs. ID
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
-1
-25
td(on)
10
10
0
0
0
25
FUJI POWER MOSFET
VDS [V]
ID [A]
Tch [ C]
10
50
td(off)
max.
min.
1
75
100
10
10
2
Ciss
Coss
Crss
1
125
tr
tf
150
10
3
3