2SK3913-01MR_05 FUJI [Fuji Electric], 2SK3913-01MR_05 Datasheet
2SK3913-01MR_05
Manufacturer Part Number
2SK3913-01MR_05
Description
N-CHANNEL SILICON POWER MOSFET
Manufacturer
FUJI [Fuji Electric]
Datasheet
1.2SK3913-01MR_05.pdf
(4 pages)
2SK3913-01MR
Super FAP-G Series
Note *1 Tch 150°C
Note *2 Starting Tch=25°C, I
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
Note *4 I
Note *5 I
http://www.fujielectric.co.jp/fdt/scd/
Thermalcharacteristics
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Non-repetitive
Maximum avalanche energy
Repetitive
Maximum avalanche energy
Maximum drain-source dV/dt
Peak diode recovery dV/dt
Peak diode recovery -di/dt
Max. power dissipation
Operating and storage
temperature range
Isolation voltage
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Thermal resistance
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Item
Electrical characteristics (T
Features
High speed switching
No secondary breadown
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
E
See to ‘Transient Thermal impedance’ graph.
See to ‘Avalanche Energy’ graph.
F
F
AS
= <
= <
= <
-I
-I
limited by maximum channel temperrature and avalanche current.
D
D
, -di/dt=100A/μs, Vcc BV
, -di/dt=100A/μs, Vcc BV
off
on
AS
=6A, L=14.1mH, V
<
= <
c
Symbol
V
V
I
I
V
I
E
dV
dV/dt
-di/dt
P
T
T
V
D
AR
D(puls]
=25°C unless otherwise specified)
AS
D
ch
stg
DSX
ISO *6
DS
GS
DS
DSS
DSS
/dt
R
R
Symbol
, Tch 150°C
, Tch 150°C
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
V
t
Q
th(ch-c)
th(ch-a)
GSS
f
DC-DC converters
I
r
rr
Low driving power
fs
Low on-resistance
DSS
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
G
GS
GD
rr
(on)
(off)
CC
= <
= <
=48V, R
-55 to +150
Ratings
+150
Absolute maximum ratings
250
220
±56
±30
301.1
100
14
14
20
37
3.7
5
2.16
2
G
=50Ω
Test Conditions
V
V
R
V
V
Test Conditions
I
I
V
I
I
V
V
f=1MHz
V
I
V
I
I
-di/dt=100A/μs
channel to ambient
channel to case
D
D
D
D
F
F
D
CC
GS
GS
DS
DS
GS
DS
GS
CC
GS
=14A V
=14A V
= 250 μ A
= 250 μ A
=7A
=7A
=14A
FUJI POWER MOSFET
=48V I
=10V
=10 Ω
=250V V
=200V V
=±30V
=75V
=0V
=125V
=10V
Unit
mJ
mJ
kV/μs
kV/μs
A/μs
W
W
°C
°C
kVrms
A
A
A
V
V
V
V
V
N-CHANNEL SILICON POWER MOSFET
GS
DS
GS
GS
D
V
=10V
=25V
=7A
=0V T
=0V
V
Note *1
Note *2
Note *3
VDS 250V
Note *4
Note *5
Ta=25 °C
Tc=25 °C
t=60sec, f=60Hz
DS
Remarks
GS
GS
V
V
GS
GS
DS
=0V
=0V
=0V
T
=-30V
=V
= <
=0V
ch
ch
=25°C
GS
=25°C
T
T
ch
ch
=125°C
=25°C
TO-220F
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Min.
250
3.0
5
Typ.
220
780
120
10
90
12
23
22
6
3
6
7
6
1.00
0.5
Source(S)
Drain(D)
1170
Max.
100
280
135
250
58.0
25
18
35
33
3.378
11
5.0
2.0
9
4.5
9
9
1.50
1.25
Units
°C/W
°C/W
200509
ns
V
V
μA
mA
nA
mΩ
S
pF
nC
V
ns
μC
1
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2SK3913-01MR_05 Summary of contents
Page 1
... Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) Maximum ratings and characteristic (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage DSX Continuous drain current I D Pulsed drain current I D(puls] Gate-source voltage ...
Page 2
... Characteristics Allowable Power Dissipation PD=f(Tc ° C] Typical Transfer Characteristic ID=f(VGS):80 μ s pulse test,VDS=25V,Tch= 0.1 0. VGS[V] Typical Drain-Source on-state Resistance μ RDS(on)=f(ID):80 s pulse test,Tch=25 1.0 0.9 7.0V VGS=6.5V 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 [A] Typical Output Characteristics ID=f(VDS):80 ...
Page 3
... Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA 7 6 max min -50 - Tch [ ° C] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10n 1n 100p 10p VDS [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG= td(off) td(on ...
Page 4
... Maximum Avalanche Current Pulsewidth I =f(t ):starting Tch= Single Pulse Transient Thermal Impedance Zth(ch-c)=f(t):D http://www.fujielectric.co.jp/fdt/scd/ ° C,Vcc=48V - [sec ...