2SK3921-01S FUJI [Fuji Electric], 2SK3921-01S Datasheet - Page 3

• Manufacturer Part Number: 2SK3921-01S
• Description: N-CHANNEL SILICON POWER MOSFET
• Manufacturer: FUJI [Fuji Electric]

2SK3921-01L,S,SJ
10
10
10
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
10
10
10
3
2
1
3
2
1
0
10
-50
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10
-1
td(off)
-25
td(on)
tf
tr
10
0
10
0
0
25
VDS [V]
ID [A]
Tch [
50
10
max.
10
min.
1
1
°
C]
75
100
10
2
125
10
μ
Ciss
2
Ω
Coss
Crss
A
150
100
800
700
600
500
400
300
200
100
0.1
14
12
10
10
8
6
4
2
0
1
0
0.00
0
0
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=67A
Typical Gate Charge Characteristics
VGS=f(Qg):ID=67A,Tch=25
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
I
I
AS
AS
I
AS
=41A
=27A
=67A
10
0.25
25
20
0.50
30
50
starting Tch [
μ
FUJI POWER MOSFET
s pulse test,Tch=25
40
Qg [nC]
VSD [V]
0.75
75
50
°
C]
Vcc=60V
1.00
100
60
°
C
70
1.25
125
80
°
C
1.50
150
90
3