2N60-TA3-R UTC [Unisonic Technologies], 2N60-TA3-R Datasheet
2N60-TA3-R
Related parts for 2N60-TA3-R
2N60-TA3-R Summary of contents
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... Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient converters and bridge circuits ...
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... ABSOLUTE MAXIMUM RATINGS ( PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) Drain Current Continuous Drain Current Pulsed (Note 2) Avalanche Energy Peak Diode Recovery dv/dt (Note 4) Total Power Dissipation Junction Temperature Storage Temperature Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. ...
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... ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage Continuous Drain-Source Current Pulsed Drain-Source Current Reverse Recovery Time Reverse Recovery Charge Note: 1. Pulse Test: Pulse Width ≤ ...
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... TEST CIRCUITS AND WAVEFORMS P.W. (Driver (D.U.T (D.U.T.) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw + D.U. Driver * dv/dt controlled Same Type * D.U.T.-Device Under Test GS as D.U.T. Fig. 1A Peak Diode Recovery dv/dt Test Circuit Period I , Body Diode Forward Current FM Body Diode Reverse Current Body Diode Recovery dv /dt ...
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... TEST CIRCUITS AND WAVEFORMS (Cont 10V Pulse Width ≤ 1μs Duty Factor ≤0.1% Fig. 2A Switching Test Circuit 50kΩ 12V 0.3μF 0.2μ 3mA Fig. 3A Gate Charge Test Circuit 10V t p Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO ...
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... TYPICAL CHARACTERISTICS On-Region Characteristics V GS Top: 15. .0V 6 .5V 6 .0V Bottorm : 5. 250μs Pulse Test Drain-Source Voltage, V On-Resistance Variation vs . Drain Current and Gate Voltage 12 T =25℃ =10V =20V ...
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... TYPICAL CHARACTERISTICS(Cont.) Breakdown Voltage vs . Temperature 1.2 V =10V GS I =250μA D 1.1 1.0 0.9 0.8 -100 - Junction Temperature, T Max. Safe Operating Area Operation in This Area is Limited by R DS(on =25℃ =125℃ J Single Pulse - Drain-Source Voltage, V Thermal Response D=0 (t) = 2.78℃ ...
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... UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury ...