2N60-TA3-R UTC [Unisonic Technologies], 2N60-TA3-R Datasheet - Page 6

• Manufacturer Part Number: 2N60-TA3-R
• Description: 2 Amps, 600 Volts N-CHANNEL MOSFET
• Manufacturer: UTC [Unisonic Technologies]

2N60
TYPICAL CHARACTERISTICS
500
400
300
200
100
10
10
10
12
10
8
6
4
2
0
0
0
-1
-2
10
On-Resistance Variation vs . Drain Current and
0
10
T
V
f = 1MHz
Top:
-1
J
-1
GS
UNISONIC TECHNOLOGIES CO., LTD
=25℃
www.unisonic.com.tw
Capacitance vs. Drain-Source Voltage
Bottorm :
=0V
10 .0V
15.0V
8 .0V
7 .0V
6 .5V
6 .0V
V
5.5V
1
Drain-Source Voltage, V
Drain-Source Voltage, V
GS
On-Region Characteristics
Drain Current , I
2
10
Gate Voltage
10
0
V
C
C
0
GS
V
oss
rss
GS
C
=20V
3
iss
=10V
250μs Pulse Test
T
C
D
=25℃
C
(C
C
C
(A)
4
iss=
oss
rss
DS
10
10
DS
DS
=C
=C
C
=shorted)
1
1
GS
(V)
GD
(V)
DS
+C
5
+C
GD
GD
6
10
12
10
10
10
10
8
6
4
0
2
-1
-1
0
0
0
0.2
2
V
250μs Pulse Test
V
250μs Pulse Test
Body Diode Forward Voltage Variation vs.
Gate Charge vs. Gate Charge Voltage
125℃
DS
GS
=50V
=0V
0.4
Source Current and Temperature
2
Source-Drain Voltage, V
Total Gate Charge, Q
Gate-Source Voltage, V
25℃
85℃
4
V
V
Transfer Characteristics
V
25℃
0.6
DS
DS
DS
=300V
=480V
=120V
4
0.8
6
Power MOSFET
-20℃
1.0
6
G
1.2
(nC)
SD
GS
8
8
(V)
I
(V)
QW-R502-053,E
D
1.4
=2.4A
6 of 8
1
0
1.6
10