2N7002M JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd], 2N7002M Datasheet
2N7002M
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2N7002M Summary of contents
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... JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate MOSFET 2N7002M MOSFET( N-Channel ) DESCRIPTION High cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents ...
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ELECTRICAL CHARACTERISTICS(Ta=25 ℃ Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage* Gate-body Leakage Zero Gate Voltage Drain Current On-state Drain Current* Drain-Source On-Resistance* Drain-Source On- Voltage * Forward Tran conductance* Diode Forward Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance * Pulse ...
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... Typical Characteristics 2N7002M ...
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illim ...