FMQT4292 JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd], FMQT4292 Datasheet

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FMQT4292

Manufacturer Part Number
FMQT4292
Description
TRANSISTOR
Manufacturer
JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
Datasheet
DESCRIPTION
PNP and NPN Epitaxial Silicon Transistor
FEATURES
APPLICATION
IDEAL FOR LOW POWER AMPLIFICATION AND SWITCHING
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: 4292
A42 MAXIMUM RATINGS* T
V
V
V
I
T
R
R
A92
V
V
V
I
T
R
R
C
C
J
J
CBO
CEO
EBO
Ө JA
Ө JC
CBO
CEO
EBO
Ө JA
Ө JC
, T
, T
4292
FMQT4292
stg
stg
Symbol
Symbol
Complementary Pair
Tow A42-Type NPN, Tow A92-Type PNP
Epitaxial Planar Die Construction
MAXIMUM RATINGS* T
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Junction and Storage Temperature
Thermal Resistance, junction to Ambient
Thermal Resistance, unction to Case
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Junction and Storage Temperature
Thermal Resistance, junction to Ambient
Thermal Resistance, unction to Case
TRANSISTOR
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-08A Plastic-Encapsulate Transistors
A
=25 ℃ unless otherwise noted
A
=25 ℃ unless otherwise noted
Parameter
Parameter
WBFBP-08A
(4×4×0.5)
unit: mm
-55-150
-55-150
Value
Value
-300
-300
-500
83.3
83.3
310
305
500
200
200
-5
5
℃/mW
℃/mW
℃/mW
℃/mW
Units
Units
mA
mA
V
V
V
V
V
V
1

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FMQT4292 Summary of contents

Page 1

... JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-08A Plastic-Encapsulate Transistors FMQT4292 TRANSISTOR DESCRIPTION PNP and NPN Epitaxial Silicon Transistor FEATURES Complementary Pair Tow A42-Type NPN, Tow A92-Type PNP Epitaxial Planar Die Construction APPLICATION IDEAL FOR LOW POWER AMPLIFICATION AND SWITCHING For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc ...

Page 2

A42 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency A92 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter ...

Page 3

A42 ...

Page 4

A92 ...

Page 5

Dimensions In Millimeters Symbol Min. A 0.450 A1 0.000 b 0.350 D 3.900 E 3.900 D1 1.120 REF. E1 1.120 REF. D2 0.900 REF. E2 0.900 REF. e 1.000 TYP. L 0.450 REF. k 0.300 REF. z 0.300 REF. Dimensions ...

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