SUD50N02-04P_08 VISHAY [Vishay Siliconix], SUD50N02-04P_08 Datasheet

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SUD50N02-04P_08

Manufacturer Part Number
SUD50N02-04P_08
Description
N-Channel 20-V (D-S) 175C MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Notes
a.
b.
c.
Document Number: 72216
S-40272—Rev. B, 23-Feb-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
Surface Mounted on FR4 Board, t v 10 sec.
Limited by package
Single Pulse
DS
20
20
(V)
Ordering Information:
SUD50N02-04P
SUD50N02-04P—E3 (Lead Free)
G
Top View
TO-252
c
c
D
S
a
a
0.0043 @ V
0.006 @ V
a
a
r
DS(on)
Drain Connected to Tab
N-Channel 20-V (D-S) 175_C MOSFET
Parameter
Parameter
GS
GS
(W)
= 4.5 V
= 10 V
a
A
= 25_C UNLESS OTHERWISE NOTED)
I
D
34
28
(A)
Steady State
L= 0 1 mH
L= 0.1 mH
T
t v 10 sec
T
T
T
A
A
C
C
a
G
= 25_C
= 25_C
= 25_C
= 25_C
N-Channel MOSFET
D
S
Symbol
Symbol
T
R
R
R
V
V
J
Eas
I
I
P
P
, T
DM
thJC
I
I
I
AS
thJA
DS
GS
D
D
S
D
D
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
APPLICATIONS
D Synchronous Buck Converter
D Synchronous Rectification
stg
− Low-Side
− Desktop, Servers, Desknote
− POL
Typical
0.85
15
40
−55 to 175
Limit
SUD50N02-04P
"20
8.3
8.3
100
125
136
34
50
20
50
Vishay Siliconix
a
b
a
a
Maximum
1.1
18
50
www.vishay.com
Unit
Unit
_C/W
mJ
C/W
_C
W
W
V
V
A
A
A
1

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SUD50N02-04P_08 Summary of contents

Page 1

... TO-252 Drain Connected to Tab Top View Ordering Information: SUD50N02-04P SUD50N02-04P—E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) c Avalanche Current ...

Page 2

... SUD50N02-04P Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance Drain Source On State Resistance b Forward Transconductance a Dynamic ...

Page 3

... S-40272—Rev. B, 23-Feb-04 0.010 T = −55_C C 0.008 T = 25_C C 0.006 T = 125_C C 0.004 0.002 0.000 100 100 125 150 175 SUD50N02-04P Vishay Siliconix On-Resistance vs. Drain Current Drain Current (A) D Gate Charge ...

Page 4

... SUD50N02-04P Vishay Siliconix THERMAL RATINGS Max Avalanche and Drain Current vs. Case Temperature 100 Tc − Case Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 4 1000 100 10 1 0.1 0.0 125 150 175 Normalized Thermal Transient Impedance, Junction-to-Ambient − ...

Page 5

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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