SUD50N02-04P_08 VISHAY [Vishay Siliconix], SUD50N02-04P_08 Datasheet - Page 3

• Manufacturer Part Number: SUD50N02-04P_08
• Description: N-Channel 20-V (D-S) 175C MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 72216
S-40272—Rev. B, 23-Feb-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
7000
6000
5000
4000
3000
2000
1000
160
120
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
40
0
0
−50 −25
0
0
V
I
D
On-Resistance vs. Junction Temperature
GS
= 20 A
C
= 10 V
rss
V
T
0
DS
J
15
5
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
Transconductance
25
C
I
C
D
iss
Capacitance
oss
- Drain Current (A)
50
30
10
75
100
T
T
T
C
C
45
15
C
125
= −55_C
= 125_C
= 25_C
150
175
60
20
0.010
0.008
0.006
0.004
0.002
0.000
100
10
10
1
8
6
4
2
0
0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 50 A
On-Resistance vs. Drain Current
= 10 V
0.3
V
20
T
SD
J
20
Q
= 150_C
g
− Source-to-Drain Voltage (V)
I
− Total Gate Charge (nC)
D
- Drain Current (A)
Gate Charge
40
0.6
SUD50N02-04P
Vishay Siliconix
40
V
GS
V
GS
60
0.9
= 4.5 V
= 10 V
T
J
= 25_C
60
www.vishay.com
80
1.2
100
80
1.5
3