SUD50N02-09P_06 VISHAY [Vishay Siliconix], SUD50N02-09P_06 Datasheet - Page 2

• Manufacturer Part Number: SUD50N02-09P_06
• Description: N-Channel 20-V (D-S), 175Celsius MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

SPICE Device Model SUD50N02-09P
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
2
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
c
c
b
Parameter
a
c
c
c
c
c
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
t
t
DS(on)
C
V
C
C
Q
Q
D(on)
GS(th)
Q
d(on)
d(off)
t
t
t
SD
oss
rss
rr
iss
gs
gd
r
f
g
I
V
D
V
V
DS
GS
≅ 50 A, V
GS
I
= 10 V, V
= 10 V, I
F
= 0 V, V
V
V
V
V
= 50 A, di/dt = 100 A/µs
V
DD
Test Condition
DS
I
DS
GS
F
GS
= 50 A, V
= 10 V, R
= V
= 4.5 V, I
= 5 V, V
= 10 V, I
GEN
DS
D
GS
GS
= 20 A, T
, I
= 10 V, f = 1 MHz
= 10 V, R
= 4.5 V, I
D
GS
GS
L
= 250 µA
D
D
= 0.20 Ω
= 20 A
= 20 A
= 0 V
= 10 V
J
G
= 125°C
D
= 2.5 Ω
= 50 A
Simulated
0.0078
0.0136
Data
0.010
1212
10.6
0.91
438
470
237
1.7
4.2
32
10
31
4
9
9
Measured
0.0135
Data
S-60543Rev. B, 10-Apr-06
0.008
1300
10.5
470
275
1.1
4.2
10
25
12
35
Document Number: 72195
4
8
Unit
nC
pF
ns
Ω
V
A
V