SUD50N03-12P_06 VISHAY [Vishay Siliconix], SUD50N03-12P_06 Datasheet - Page 2
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SUD50N03-12P_06
Manufacturer Part Number
SUD50N03-12P_06
Description
N-Channel 30-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
1.SUD50N03-12P_06.pdf
(4 pages)
SPICE Device Model SUD50N03-12P
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
2
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
c
c
b
Parameter
a
c
c
c
c
c
a
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
t
t
DS(on)
C
V
C
C
Q
Q
D(on)
GS(th)
Q
d(on)
d(off)
g
t
t
SD
oss
rss
iss
fs
gs
gd
r
f
g
I
V
V
D
V
GS
DS
≅ 50 A, V
GS
= 10 V, I
= 15 V, V
= 0 V, V
V
V
V
V
V
V
DD
Test Condition
DS
I
GS
DS
S
GS
DS
= 15 V, R
= 40 A, V
= V
= 5 V, V
= 4.5 V, I
= 10 V, I
= 15 V, I
GEN
DS
D
GS
GS
= 20 A, T
= 10 V, R
, I
= 25 V, f = 1 MHz
= 10 V, I
D
GS
GS
L
= 250 µA
D
D
D
= 0.30 Ω
= 20 A
= 20 A
= 10 V
= 15 A
= 0 V
J
G
= 125°C
D
= 2.5 Ω
= 50 A
Simulated
0.0134
0.0149
Data
0.010
1680
0.90
464
291
1.9
34
91
27
17
13
11
13
6
5
Measured
S-60677Rev. B, 01-May-06
0.0138
Data
0.010
1600
285
140
1.2
28
15
20
12
Document Number: 72495
6
5
9
Unit
nC
pF
ns
Ω
V
A
S
V