SUD50N03-11 Vishay Siliconix, SUD50N03-11 Datasheet
SUD50N03-11
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SUD50N03-11 Summary of contents
Page 1
... –55 to 175 J stg Symbol Typical t 10 sec thJA thJA Steady State thJC R 4 thJL SUD50N03-11 Vishay Siliconix Limit Unit 100 7.5 C Maximum Unit 20 60 C/W C/W 2.4 4.8 C/W www.vishay.com FaxBack 408-970-5600 ...
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... SUD50N03-11 Vishay Siliconix Parameter Symbol Static Drain-Source Breakdown Voltage V (BR)DSS Gate Threshold Voltage V Gate-Body Leakage I Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance DS(on) b Forward Transconductance a Dynamic Input Capacitance ...
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... C 0.03 125 C 0.02 0. 100 iss SUD50N03-11 Vishay Siliconix Transfer Characteristics T = – 125 – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current 100 I – ...
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... SUD50N03-11 Vishay Siliconix On-Resistance vs. Junction Temperature 2 1.6 1.2 0.8 0.4 0 –50 – 100 T – Junction Temperature ( C) J Maximum Avalanche Drain Current vs. Case Temperature 100 T – Case Temperature ( C) C Normalized Thermal Transient Impedance, Junction-to-Case ...