SUD50N03-11 Vishay Siliconix, SUD50N03-11 Datasheet - Page 2

• Manufacturer Part Number: SUD50N03-11
• Description: P-Channel MOSFET
• Manufacturer: Vishay Siliconix

SUD50N03-11
Vishay Siliconix
Notes
a.
b.
c.
www.vishay.com FaxBack 408-970-5600
2
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
D i S
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristic (T
Continuous Current
Pulsed Current
Diode Forward Voltage
Source-Drain Reverse Recovery Time
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
Independent of operating temperature.
c
c
a
O S
Parameter
c
c
c
c
c
b
b
R
i
b
300 s, duty cycle
b
b
Symbol
V
V
r
(BR)DSS
I
DS(on)
t
t
I
I
I
C
GS(th)
D(on)
C
V
C
Q
Q
d(on)
d(off)
GSS
DSS
DSS
I
g
Q
2%.
SM
I
t
oss
t
t
SD
iss
rss
fs
gs
gd
S
rr
r
f
g
New Product
C
I
I
V
D
V
V
= 25 C)
V
V
V
DS
GS
GS
DS
I
= 24 V, V
50 A V
50 A, V
F
V
= 0 V, V
V
= 15 V, V
= 5 V, I
V
V
V
V
V
DS
V
V
I
= 50 A, di/dt = 100 A/ s
V
DS
Test Condition
DD
DD
F
GS
0 V V
15 V V
DS
GS
GS
DS
DS
= 100 A, V
= 0 V, V
= V
= 15 V, R
= 0 V, I
= 24 V, V
= 4.5 V, I
= 5 V, V
= 10 V, I
= 15 V, I
GEN
15 V R
D
DS
GS
GS
= 20 A, T
GS
, I
= 25 V, F = 1 MHz
= 10 V, R
= 0 V, T
,
GS
D
D
= 5 V, I
25 V F
10 V R
GS
D
GS
= 250 A
D
GS
D
L
L
= 250 A
5 V I
=
= 0.3
= 25 A
= 20 A
= 15 A
= 5 V
= 0 V
= 0 V
0 3
J
J
20 V
= 125 C
D
G
= 125 C
= 50 A
= 2.5
1 MH
50 A
2 5
Min
0.8
30
50
10
Typ
0.009
0.014
1130
400
175
4.5
12
10
18
30
4
8
6
S-01329—Rev. B, 12-Jun-00
a
Document Number: 71187
Max
0.011
0.018
0.017
1.5
50
20
12
15
30
50
80
50
100
1
9
Unit
nA
nC
pF
ns
ns
ns
V
V
A
S
A
A
V
A
A
C
F