SUD50N03-11 Vishay Siliconix, SUD50N03-11 Datasheet - Page 4

• Manufacturer Part Number: SUD50N03-11
• Description: P-Channel MOSFET
• Manufacturer: Vishay Siliconix

SUD50N03-11
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
4
0.01
2.0
1.6
1.2
0.8
0.4
60
50
40
30
20
10
0.1
0
0
–50
2
1
0
10
On-Resistance vs. Junction Temperature
–4
V
Maximum Avalanche Drain Current vs.
I
–25
Duty Cycle = 0.5
0.2
0.1
D
GS
= 25 A
25
= 10 V
Single Pulse
T
0
J
T
0.05
50
C
– Junction Temperature ( C)
Case Temperature
– Case Temperature ( C)
0.02
25
75
50
10
–3
75
100
Normalized Thermal Transient Impedance, Junction-to-Case
100
125
125
150
150
10
–2
175
175
Square Wave Pulse Duration (sec)
New Product
10
–1
100
10
500
100
0.1
1
10
1
0
0.1
Source-Drain Diode Forward Voltage
by r
Limited
DS(on)
V
0.3
T
SD
V
J
DS
= 150 C
1
– Source-to-Drain Voltage (V)
Single Pulse
T
– Drain-to-Source Voltage (V)
Safe Operating Area
C
1
= 25 C
0.6
S-01329—Rev. B, 12-Jun-00
0.9
Document Number: 71187
T
J
10
= 25 C
10
1.2
10 s
100 s
10 ms
100 ms
1 s
dc
30
1.5
100