SUD50P04-15_05 VISHAY [Vishay Siliconix], SUD50P04-15_05 Datasheet
SUD50P04-15_05
Related parts for SUD50P04-15_05
SUD50P04-15_05 Summary of contents
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... –55 to 175 J stg Symbol Typical t 10 sec thJA thJA Steady State 40 R 1.2 thJC SUD50P04-15 Vishay Siliconix Limit Unit – –50 – –150 –50 b 100 Maximum Unit 18 50 C/W C/W 1.5 www.vishay.com FaxBack 408-970-5600 ...
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... SUD50P04-15 Vishay Siliconix Parameter Symbol Static Drain-Source Breakdown Voltage V (BR)DSS Gate Threshold Voltage V Gate-Body Leakage I Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance DS(on) a Forward Transconductance b Dynamic Input Capacitance ...
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... 0. 0.03 125 C 0.02 0. 100 iss SUD50P04-15 Vishay Siliconix Transfer Characteristics T = – 125 – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current 100 ...
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... SUD50P04-15 Vishay Siliconix On-Resistance vs. Junction Temperature 2 2.0 1.5 1.0 0.5 0 –50 – 100 T – Junction Temperature ( C) J Maximum Drain Current vs. Case Temperature 100 125 T – Case Temperature ( C) C Normalized Thermal Transient Impedance, Junction-to-Case ...
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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...