DN3545 SUTEX [Supertex, Inc], DN3545 Datasheet

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DN3545

Manufacturer Part Number
DN3545
Description
N-Channel Depletion-Mode Vertical DMOS FET
Manufacturer
SUTEX [Supertex, Inc]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DN3545N8-G
Manufacturer:
PEREGRINE
Quantity:
101
Part Number:
DN3545N8-G
Manufacturer:
Supertex
Quantity:
1 838
Part Number:
DN3545N8-G
0
Features
Applications
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*Distance of 1.6mm from case for 10 seconds.
-G indicates package is RoHS compliant (‘Green’)
Ordering Information
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
temperature
Soldering temperature*
BV
BV
450V
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Normally-on switches
Solid state relays
Converters
Linear amplifi ers
Constant current sources
Power supply circuits
Telecom
DSX
DGX
/
R
(max)
20Ω
DS(ON)
200mA
(min)
I
DSS
DN3545N3-G
DN3545N3
-55
TO-92
N-Channel Depletion-Mode
Vertical DMOS FET
O
C to +150
Package Options
300
Value
BV
BV
±20V
DGX
DSX
O
O
TO-243AA (SOT-89)
C
C
DN3545N8-G
DN3545N8
General Description
These depletion-mode (normally-on) transistors utilize an
advanced vertical DMOS structure and Supertex’s well-
proven silicon-gate manufacturing process. This combination
produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and
positive temperature coeffi cient inherent in MOS devices.
Characteristic of all MOS structures, these devices are free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Package Options
(front view)
TO-92
S
G
D
G
TO-243AA
(top view)
D
D
DN3545
S

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DN3545 Summary of contents

Page 1

... Package Options Value BV DSX BV DGX ±20V +150 C 300 O C Package Options TO-92 TO-243AA (SOT-89) DN3545N3 DN3545N8 DN3545N3-G DN3545N8 TO-92 TO-243AA (front view) (top view) DN3545 ...

Page 2

... GS D Ω 100mA 10V -5V 25V 1MHz 25V 150mA 25Ω, -10V 30 GEN -5V 150mA -5V 150mA GS SD PULSE GENERATOR R gen INPUT DN3545 I DRM 550mA 550mA OUTPUT D.U.T. ...

Page 3

... GS 1.0V 0V -0.5V -0.8V -1.0V -1. - 0.3 0.4 1.0 0.8 0.6 0.4 0.2 100 1000 3 Saturation Characteristics 0.6 0.5 0.4 0.3 0.2 0 (Volts) DS Power Dissipation vs. Ambient Temperature 2.0 TO-243AA 1.5 1.0 TO-92 0 100 125 Thermal Response Characteristics TO-243AA 1.6W D TO- 1. 0.001 0.01 0 (seconds) p DN3545 V = +2V GS +1.0V 0V -0.5V -0.8V -1.0V -1.5V 10 150 ...

Page 4

... On Resistance vs. Drain Current 0.2 0.4 0.6 I (Amperes and R w/ Temperature GS(OFF) DS(ON) 1.5 1.3 1 10µA GS(OFF) 0.9 0 0V, 150mA DS(ON) 0.5 - 100 Gate Drive Dynamic Characteristics 150mA 30V (Nanocoulombs) G DN3545 0.8 2.4 2.0 1.6 1.2 0.8 0.4 150 6 ...

Page 5

... TO-92 Surface Mount Package (N3) 0.135 MIN 0.080 - 0.105 1 Top View 0.175 - 0.205 0.170 - 0.210 Seating Plane 0.500 MIN 0.014 - 0.022 0.095 - 0.105 Front View Notes: All dimensions are in millimeters; all angles in degrees. 0.125 - 0.165 0.014 - 0.022 0.045 - 0.055 Side View 5 DN3545 ...

Page 6

... BSC 3.00 BSC Top View (The package drawing(s) in this data sheet may not refl ect the most current specifi cations. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-DN3545 A012207 1.50 ± 0.10 0.40 ± 0.05 2.21 ± 0.08 0.5 ± 0.06 Side View Notes: All dimensions are in millimeters ...

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