TP2520_07 SUTEX [Supertex, Inc], TP2520_07 Datasheet

TP2520_07

Manufacturer Part Number

TP2520_07

Description

P-Channel Enhancement Mode Vertical DMOS FETs

Manufacturer

SUTEX [Supertex, Inc]

Datasheet

1.TP2520_07.pdf (5 pages)

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Features

►

Applications

►

-G indicates package is RoHS compliant (‘Green’)

Absolute Maximum Ratings

Ordering Information

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Soldering temperature*

Absolute Maximum Ratings are those values beyond which damage to

the device may occur. Functional operation under these conditions is not

implied. Continuous operation of the device at the absolute rating level

may affect device reliability. All voltages are referenced to device ground.

* Distance of 1.6 mm from case for 10 seconds.

Low threshold — -2.4V max.

High input impedance

Low input capacitance — 125pF max.

Fast switching speeds

Low ON-resistance

Free from secondary breakdown

Low input and output leakage

Complementary N and P-channel devices

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

DSS

-200

(V)

/BV

DGS

max

DS(ON)

(Ω)

P-Channel Enhancement Mode

Vertical DMOS FETs

max

-2.4

GS(th)

(V)

-55°C to +150°C

300°C

Value

±20V

-0.75

D(ON)

min

(A)

DGS

DSS

General Description

This low threshold enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and with the high input

impedance and positive temperature coefﬁ cient inherent

in MOS devices. Characteristic of all MOS structures,

this device is free from thermal runaway and thermally-

induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching

speeds are desired.

Pin Conﬁ guration

Product Marking

TP5CW

TO-243AA (SOT-89) (N8)

TO-243AA (SOT-89)

W = Code for week sealed

DRAIN

Package Option

TN2520N8-G

GATE

DRAIN

SOURCE

TP2520

Related parts for TP2520_07

TP2520_07 Summary of contents

Page 1

Features ► Low threshold — -2.4V max. ► High input impedance ► Low input capacitance — 125pF max. ► Fast switching speeds ► Low ON-resistance ► Free from secondary breakdown ► Low input and output leakage ► Complementary N and ...

Page 2

Thermal Characteristics Package (continuous)* (mA) TO-243AA (SOT-89) -260 * I (continuous) is limited by max rated T D † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Electrical Characteristics Symbol Parameter BV Drain-to-source breakdown voltage DSS V Gate threshold ...

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TP2520_07 SUTEX [Supertex, Inc], TP2520_07 Datasheet

TP2520_07

Related parts for TP2520_07

TP2520_07 Summary of contents

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