TP5322K1 SUTEX [Supertex, Inc], TP5322K1 Datasheet

TP5322K1

Manufacturer Part Number

TP5322K1

Description

P-Channel Enhancement-Mode Vertical DMOS FET

Manufacturer

SUTEX [Supertex, Inc]

Datasheet

1.TP5322K1.pdf (2 pages)

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Features

Application

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature****

****Distance of 1.6mm from case for 10 seconds.

Ordering Information

**Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

***Same as SOT-23. Products supplied on 3000 piece carrier tape reels.

TP5322N8-G*

TO-243AA**

TP5322N8

Low threshold, -2.4V max.

High input impedance

Low input capacitance, 110pFmax.

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

Complementary N- and P-channel devices

Logic level interfaces-ideal for TTL and CMOS

Battery operated systems

Photo voltaic devices

Analog switches

General purpose line drivers

Telecom switches

Order Number / Package

TP5322K1-G*

TO-236AB***

TP5322K1

P-Channel Enhancement-Mode

Vertical DMOS FET

-220V

-55°C to +150°C

DSS

DGS

(max)

300°C

12Ω

±20V

DS(ON)

DGS

DSS

(max)

-2.4V

GS(th)

General Description

These

transistors utilize an advanced vertical DMOS structure and

Supertex's well-proven silicon-gate manufacturing process. This

combination

capabilities of bipolar transistors and with the high input

impedance and positive temperature coefficient inherent in MOS

devices. Characteristic of all MOS structures, these devices are

free from thermal runaway and thermally-induced secondary

breakdown.

Supertex's vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very low

threshold

impedance, low input capacitance, and fast switching speeds are

desired.

Package Options

TO-243AA

(SOT-89)*

low

(min)

-0.7A

voltage,

D(ON)

produces

* "Green" Certified Package

threshold

high

devices

enhancement-mode

breakdown

Where ✶=2-week alpha date code

Product Marking for SOT-23

Product Marking for SOT-89

with

TO-236AB

(SOT-23)*

TP3C✶

Rev. 3

P3C✶

Initial Release

the

voltage,

power

TP5322

September 14, 2004

(normally-off)

TP5322

high

handling

A042005

input

Related parts for TP5322K1

TP5322K1 Summary of contents

Page 1

... Ordering Information Order Number / Package TO-243AA** TO-236AB*** TP5322N8 TP5322K1 TP5322N8-G* TP5322K1-G* **Same as SOT-89. Product supplied on 2000 piece carrier tape reels. ***Same as SOT-23. Products supplied on 3000 piece carrier tape reels. P-Channel Enhancement-Mode Vertical DMOS FET General Description These transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process ...

Page 2

Thermal Characteristics Package I (continuous) D TO-243AA -0.26A TO-236AB -0.12A *I (continous) is limited by max rated Tj. D **Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substate. Electrical Characteristics Symbol Parameter BV ...

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