TP5322K1-G SUTEX [Supertex, Inc], TP5322K1-G Datasheet

no-image

TP5322K1-G

Manufacturer Part Number
TP5322K1-G
Description
P-Channel Enhancement-Mode Vertical DMOS FETs
Manufacturer
SUTEX [Supertex, Inc]
Datasheet
Features
Applications
-G indicates package is RoHS compliant (‘Green’)
Notes:
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
3
Ordering Information
Distance of 1.6mm from case for 10 seconds.
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature
TP5322K1-G
High input impedance
Low threshold
Low input capacitance
Fast switching speeds
Low on resistance
Low input and output leakage
Free from secondary breakdown
Complementary N- and P-channel devices
Logic level interfaces - ideal for TTL and CMOS
Battery operated systems
Photo voltaic devices
Analog switches
General purpose line drivers
Telecom switches
TO-236AB
TP5322K1
1
Same as SOT-23,
Package Options
1
2
Same as SOT-89.
3
TP5322N8-G
TO-243AA
TP5322N8
P-Channel Enhancement-Mode
Vertical DMOS FETs
2
-55
BV
O
DSS
C to +150
-220V
where
/BV
Product marking for TO-236AB:
300
BV
DGS
Value
BV
±20V
DGS
DSS
O
O
= 2-week alpha date code
C
C
General Description
The Supertex TP5322 is a low threshold enhancement-
mode (normally-off) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coeffi cient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
P3C
Pin Confi gurations
R
(max)
12Ω
DS(ON)
Gate
TO-236AB
(Top View)
Drain
Source
V
(max)
-2.4V
where
GS(TH)
Product marking for TO-243AA:
= 2-week alpha date code
G
TP3C
TO-243AA
(top view)
D
D
TP5322
(min)
-0.7A
I
D(ON)
S

Related parts for TP5322K1-G

TP5322K1-G Summary of contents

Page 1

... Analog switches ► General purpose line drivers ► Telecom switches Ordering Information Package Options TO-236AB 1 TO-243AA TP5322K1 TP5322N8 TP5322K1-G TP5322N8-G -G indicates package is RoHS compliant (‘Green’ Notes: Same as SOT-23, Same as SOT-89. Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage ...

Page 2

Thermal Characteristics I Package D (continuous) 1 TO-236AB -0.12A TO-243AA -0.26A Notes (continuous) is limited by max rated Mounted on FR4 board, 25mm x 25mm x 1.57mm. Signifi cant P Electrical Characteristics Symbol Parameter BV ...

Page 3

TO-236AB (SOT-23) Package Outline (K1) 0.0173 ± 0.0027 (0.4394 ± 0.0685) 0.0906 ± 0.0079 (2.299 ± 0.199) 1 0.0754 ± 0.0053 (1.915 ± 0.135) Top View 0.115 ± 0.005 (2.920 ± 0.121) 0.0400 ± 0.007 (1.016 ± 0.178) 0.0210 ...

Page 4

TO-243AA (SOT-89) Surface Mount Package (N8) 4.50 ± 0.10 1.72 ± 0.10 4.10 ± 0.15 2.45 ± 0.15 1.05 ± 0.15 0.42 ± 0.06 1.50 BSC 3.00 BSC Top View (The package drawing(s) in this data sheet may not ...

Related keywords