TN2640LG SUTEX [Supertex, Inc], TN2640LG Datasheet
TN2640LG
Manufacturer Part Number
TN2640LG
Description
N-Channel Enhancement-Mode Vertical DMOS FETs
Manufacturer
SUTEX [Supertex, Inc]
Datasheet
1.TN2640LG.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TN2640LG
Manufacturer:
SUPERTEX
Quantity:
20 000
Ordering Information
†
Features
❏ Low threshold — 2.0V max.
❏ High input impedance
❏ Low input capacitance
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
❏ Complementary N- and P-channel devices
Applications
❏ Logic level interfaces – ideal for TTL and CMOS
❏ Solid state relays
❏ Battery operated systems
❏ Photo voltaic drives
❏ Analog switches
❏ General purpose line drivers
❏ Telecom switches
12/19/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
MIL visual screening available.
Distance of 1.6 mm from case for 10 seconds.
BV
BV
400V
DSS
DGS
/
R
(max)
5.0Ω
DS(ON)
V
(max)
2.0V
GS(th)
-55°C to +150°C
N-Channel Enhancement-Mode
Vertical DMOS FETs
BV
BV
300°C
(min)
I
± 20V
2.0A
D(ON)
DGS
DSS
1
TN2640LG
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Package Options
SO-8
Note: See Package Outline section for dimensions.
TO-92
S G D
TN2640N3
Order Number / Package
NC
NC
TO-92
G
S
1
2
3
4
top view
SO-8
Low Threshold
TN2640K4
DPAK
G
TO-252
(D-PAK)
S
8
7
6
5
TN2640
D
D
D
D
D (TAB)
TN2640ND
Die
TN2640
†
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TN2640LG Summary of contents
Page 1
... D(ON) (max) (min) SO-8 2.0V 2.0A TN2640LG Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transis- tors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices ...
Page 2
Thermal Characteristics Package I (continuous)* D TO-92 220mA SO-8 260mA DPAK 500mA * I (continuous) is limited by max rated † Mounted on FR4 board, 25mm x 25mm x 1.57mm. Electrical Characteristics Symbol Parameter Drain-to-Source BV ...
Page 3
Typical Performance Curves Output Characteristics 5.0 4.0 3.0 2.0 1 (volts) DS Transconductance vs. Drain Current 2.0 1 25V DS 1.2 0.8 0.4 125° 1.0 2.0 I (amperes Maximum ...
Page 4
Typical Performance Curves BV Variation with Temperature DSS 1.15 1.10 1.05 1.00 0.95 0.9 0.90 - (°C) j Transfer Characteristics 3.0 2.4 1.8 1.2 0 (volts) GS Capacitance vs. Drain-to-Source Voltage 400 ...