VN4012 SUTEX [Supertex, Inc], VN4012 Datasheet

VN4012

Manufacturer Part Number

VN4012

Description

N-Channel Enhancement-Mode Vertical DMOS FETs

Manufacturer

SUTEX [Supertex, Inc]

Datasheet

1.VN4012.pdf (2 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

VN4012L

Manufacturer:

VISHAY

Quantity:

3 800

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

VN4012L-G

Manufacturer:

Quantity:

5 860

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Ordering Information

Features

❏ Free from secondary breakdown

❏ Low power drive requirement

❏ Ease of paralleling

❏ Low C

❏ Excellent thermal stability

❏ Integral Source-Drain diode

❏ High input impedance and high gain

❏ Complementary N- and P-channel devices

Applications

❏ Motor controls

❏ Converters

❏ Amplifiers

❏ Telecom Switching

❏ Power supply circuits

❏ Drivers (relays, hammers, solenoids, lamps,

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

* Distance of 1.6 mm from case for 10 seconds.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

memories, displays, bipolar transistors, etc.)

350V

400V

DSS

DGS

ISS

and fast switching speeds

(max)

15Ω

12Ω

DS(ON)

(max)

1.8V

GS(th)

0.15A

(min)

D(ON)

N-Channel Enhancement-Mode

Vertical DMOS FETs

-55°C to +150°C

Order Number / Package

300°C

± 20V

DGS

DSS

VN3515L

VN4012L

TO-92

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex's well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Package Option

Note: See Package Outline section for dimensions.

TO-92

S G D

VN3515L

VN4012L

Related parts for VN4012

VN4012 Summary of contents

Page 1

... Package Option BV DSS BV DGS ± 20V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 1 VN3515L VN4012L TO-92 ...

Page 2

... Thermal Characteristics Package I (continuous)* D VN3515L (TO-92) 150mA VN4012L (TO-92) 160mA * I (continuous) is limited by max rated Electrical Characteristics Symbol Parameter BV Drain-to-Source DSS Breakdown Voltage V Gate Threshold Voltage GS(th) I Gate Body Leakage GSS I Zero Gate Voltage Drain Current DSS I ON-State Drain Current D(ON) R Static Drain-to-Source ...

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