TN2425N8 SUTEX [Supertex, Inc], TN2425N8 Datasheet

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TN2425N8

Manufacturer Part Number
TN2425N8
Description
N-Channel Enhancement-Mode Vertical DMOS FETs
Manufacturer
SUTEX [Supertex, Inc]
Datasheet
Ordering Information
Features
❏ Low threshold
❏ High input impedance
❏ Low input capacitance
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
❏ Complementary N- and P-channel devices
Applications
❏ Logic level interfaces – ideal for TTL and CMOS
❏ Solid state relays
❏ Photo voltaic drives
❏ Analog switches
❏ General purpose line drivers
❏ Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
*
Distance of 1.6 mm from case for 10 seconds.
Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
BV
BV
250V
DSS
DGS
/
R
(max)
3.5Ω
DS(ON)
(min)
I
1.5A
D(ON)
TO-243AA*
TN2425N8
-55°C to +150°C
N-Channel Enhancement-Mode
Vertical DMOS FETs
Order Number / Package
BV
BV
300°C
± 20V
DGS
DSS
1
TN2425ND
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transis-
tors and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally induced secondary breakdown.
Supertex vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Package Option
DIE
Note: See Package Outline section for dimensions.
G
TO-243AA
(SOT-89)
where ❋ = 2-week alpha date code
D
S
Product marking for TO-243AA:
Low Threshold
D
TN4C❋
TN2425

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TN2425N8 Summary of contents

Page 1

... Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. N-Channel Enhancement-Mode Vertical DMOS FETs Order Number / Package TO-243AA* DIE TN2425N8 TN2425ND Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transis- tors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces ...

Page 2

Thermal Characteristics Package I (continuous)* D TO-243AA 480mA * I (continuous) is limited by max rated † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P Electrical Characteristics Symbol Parameter BV Drain-to-Source Breakdown Voltage ...

Page 3

Typical Performance Curves Output Characteristics (Volts) Transconductance vs. Drain Current 1 =-55°C 0 =25°C 0 =125°C 0.4 0.2 0.0 0.0 0.5 1.0 ...

Page 4

Typical Performance Curves BV Variation with Temperature DSS 1 250µA 1.1 1.0 0.9 0.8 - ° Transfer Characteristics 3.0 2 125°C 2 -55°C 1.5 1.0 0.5 ...

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