TN2425_06 SUTEX [Supertex, Inc], TN2425_06 Datasheet

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TN2425_06

Manufacturer Part Number
TN2425_06
Description
Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET
Manufacturer
SUTEX [Supertex, Inc]
Datasheet
Features
Applications
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Note 1. Distance of 1.6mm from case for 10 seconds.
Ordering Information
Parameter
Drain to source voltage
Drain to gate voltage
Gate to source voltage
Operating and storage temperature
Soldering temperature
TN2425
Device
Low threshold
High input impedance
Low input capacitance
Fast switching speeds
Low ON-resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-Channel devices
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Medical ultrasound pulsers
Analog switches
General purpose line drivers
Telecom switches
TN2425N8
Low Threshold N-Channel Enhancement-Mode
TO-243AA (SOT-89)
Package Options
1
TN2425N8-G
-55°C to +150°C
Vertical DMOS FET
BV
DSS
250V
/BV
+300°C
Value
BV
BV
DGS
±20V
DGS
DSS
R
(max)
3.5Ω
DS(ON)
General Description
The Supertex TN2425 is a low threshold enhancement-
mode (normally-off) transistor that utilizes a vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors,
and the high input impedance and positive temperature
coeffi cient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Pin Confi guration
I
(min)
1.5A
D(ON)
TO-243AA (SOT-89)
G
TN2425
(Top View)
where
Product marking for TO-243AA:
D
D
= 2-week alpha date code
S
TN4C
TN2425

Related parts for TN2425_06

TN2425_06 Summary of contents

Page 1

Low Threshold N-Channel Enhancement-Mode Features ► Low threshold ► High input impedance ► Low input capacitance ► Fast switching speeds ► Low ON-resistance ► Free from secondary breakdown ► Low input and output leakage ► Complementary N- and P-Channel devices ...

Page 2

Electrical Characteristics Symbol Parameter BV Drain-to-source breakdown voltage DSS V Gate threshold voltage GS(th) ΔV V change with temperature GS(th) GS(th) I Gate body leakage current GSS I Zero gate voltage drain current DSS I ON-state drain current D(ON) Static ...

Page 3

Typical Performance Curves Output Characteristics (Volts) DS Transconductance vs. Drain Current 1 0 0.6 T =125 ...

Page 4

Typical Performance Curves (cont.) BV Variation with Temperature DSS 1 250A 1.1 1.0 0.9 0.8 - Transfer Characteristics 3.0 2 125 2 - ...

Page 5

TO-243AA (SOT-89) Package Outline (N8) 4.50 ± 0.10 1.72 ± 0.10 4.10 ± 0.15 2.45 ± 0.15 1.05 ± 0.15 0.42 ± 0.06 1.50 BSC 3.00 BSC Top View (The package drawing(s) in this data sheet may not refl ect ...

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