SSM3310GJ SSC [Silicon Standard Corp.], SSM3310GJ Datasheet
SSM3310GJ
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SSM3310GJ Summary of contents
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... The SSM3310GH TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited for use in low voltage battery applications. The through-hole version, the SSM3310GJ in TO-251, is available for low-footprint vertical mounting. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. ...
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Electrical Characteristics @ T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS ...
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T = 0.0 2.5 5 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 800 600 400 200 (V) GS Fig 3. On-Resistance vs. ...
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T , Case Temperature ( c Fig 5. Maximum Drain Current vs. Case Temperature 100 10 T =25 °C C Single Pulse (V) DS Fig ...
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I =-2. =- Total Gate Charge (nC) G Fig 9. Gate Charge Characteristics =150 0.3 0.5 ...
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Fig 13. Switching Time Circuit -1~-3mA Fig 15. Gate Charge Circuit 2/16/2005 Rev.2 90 THE ...
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